Sematech, Inc.

Franz T Geyling

Thomas J Jasinski

An apparatus for rapid thermal processing of silicon wafers is provided. The apparatus may include a heating element, sensing element and a cooling element, all of which are positioned in opposing relation to a backside of a silicon wafer. A method of using the apparatus includes using the apparatus to rapidly heat a wafer, apply desired processing assists, and rapidly cool the wafer. The apparatus may also include an array of sensing elements which are interposed between heating elements. The sensing elements may be a combination of absolute and relative sensors. The array permits accurate zonal control of the heating elements and prevents cross talk between the heaters. The apparatus may be used to monitor the temperature at various points across a wafer and to control the associated heating elements in response to the monitoring step. The apparatus may also include a high speed rotating support for the wafer. Further, the apparatus may include a shroud surrounding the wafer which allows for more uniform processing across the wafer. Also, an inlet structure for introducing processing assists which contours to the shape of the shroud is disclosed. A method for using the apparatus includes utilizing the inlet structure to provide processing assists over the surface of a wafer and obtaining uniform depositions by aid of the shroud.

Heater and temperature sensor array for rapid thermal processing thermal

A rapid switching rotating disk reactor has an elongated injector for injecting an inert gas into the chamber of a rotating disk reactor. The nozzle of the injector is proximate to the center of the rotating wafer for the purpose of providing an inert gas flow to produce an inert gas boundary layer above the wafer. Whenever the environment of the chamber is to be changed by an introduction of another fluid medium, the injector is activated to provide an inert boundary layer atop the semiconductor wafer, wherein any processing caused by the reactive gases in the chamber is prevented from occurring. Once the chamber is filled with the subsequent fluid medium, the injector is turned off in order for the next processing to commence.

Rapid-switching rotating disk reactor

A wafer chuck is used to support a circular silicon wafer, which was formed from a single wafer casting process, in order to perform monocrystalline silicon regrowth. The cast wafer, having a monocrystalline silicon seed, located at its center, rests atop raised portions of the chuck and is held in place by vaccum at the center and the perimeter. The rest of the underside of the wafer is physically separated from the chuck surface by pressurized gas. An annular laser beam is then used to melt the silicon from the seed outward to grow the wafer into a monocrystalline form.

Single wafer regrowth of silicon

An apparatus for casting a single silicon wafer. A quartz drum having a slotted opening pours measured amounts of granulated or powdered silicon into a crucible. Heaters then melt the solid silicon to provide a molten silicon in the crucible. Utilizing controlled gas pressure, the molten silicon is poured from the crucible onto a wafer chuck in order to cast a single silicon wafer.

Spin casting of silicon wafers

A wafer chuck is used to support a circular silicon wafer, which has formed from a single wafer casting process, in order to perform monocrystalline silicon regrowth. The cast wafer, having a monocrystalline silicon seed, located at its center, rests atop raised portions of the chuck and is held in place by vacuum at the center and the perimeter. The rest of the underside of the wafer is physically separated from the chuck surface by pressurized gas. An annular laser beam is then used to melt the silicon from the seed outward to grow the wafer into a monocrystalline form.

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Austin, TX, United States of America

Franz T Geyling