Ams Ag

Austriamicrosystems Ag

Epcos Ag

Lumitech Produktion Und Entwicklung Gmbh

Siemens Aktiengesellschaft

Tdk Electronics Ag

Ams International Ag

Sciosense B.v.

Siemens Matsushita Components Gmbh & Co Kg

Tridonicatco Optoelectronics Gmbh

Ev Group Gmbh

Tridonic Optoelectronics Gmbh

Franz Schrank

Martin Schrems

Jochen Kraft

Joerg Siegert

Cathal Cassidy

Thomas Bodner

Gerald Kloiber

Hubert Enichlmair

Gregor Toschkoff

Georg Parteder

Harald Etschmaier

Jordi Teva

Günther Koppitsch

Sara Carniello

Bernhard Loeffler

Stefan Jessenig

Erwin Baumgartner

Raffaele Coppeta

Ingrid Rosc, Legal Representative

Berrit Ines Rosc, Legal Representative

Jördis Brit Rosc, Legal Representative

Roland Peinsipp

Thomas Feichtinger

Willem Frederik Adrianus Besling

Jens Hofrichter

Eugene G Dierschke

David Mehrl

Peter Pachler

Adalbert Feltz

Andreas Fitzi

Coenraad Cornelis Tak

Gerald Meinhardt

Bernhard Stering

Bernhard Löffler

Jörg Siegert

Anderson Singulani

Thomas Troxler

Alessandro Faes

Karl Rohracher

Verena Vescoli

Ronald Holzleitner

Anderson Pires Singulani

Michael Beutl

Miklos Labodi

Anton Prantl

Rainer Stowasser

Ralph Kriegel

Rainer Holzhaider

Johanna Bartel

Raimund Hoffmann

In an embodiment an LED module includes a support having at least two segments, wherein each segment is configured to emit light, wherein each segment has at least two light-emitting diodes that differ in terms of their colors, wherein the support has a multilayer structure and/or wherein the support has a substrate having a ceramic material and the ceramic material includes aluminum nitride, aluminum oxide or a varistor ceramic, and wherein the LED module is configured to set a brightness and a color of the emitted light separately for each segment.

LED module and use of the LED module

A semiconductor device includes a semiconductor body, an electrically conductive via which extends through at least a part of the semiconductor body, and where the via has a top side and a bottom side that faces away from the top side, an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to a lateral direction, where the lateral direction is perpendicular to a vertical direction given by the main axis of extension of the via, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the lateral direction. The etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction, the lateral extent in the lateral direction of the etch-stop layer amounts to at least 2.5 times the lateral extent of the via in the lateral direction, and the lateral extent of the contact layer is smaller than the lateral extent of the via or the lateral extent of the contact layer amounts to at least 2.5 times the lateral extent of the via.

Semiconductor device with through-substrate via

In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body.

Pressure sensor device and method for forming a pressure sensor device

A method for manufacturing an optical sensor is provided. The method comprises providing an optical sensor arrangement which comprises at least two optical sensor elements on a carrier, where the optical sensor arrangement comprises a light entrance surface at the side of the optical sensor elements facing away from the carrier. The method further comprises forming a trench between two optical sensor elements in a vertical direction which is perpendicular to the main plane of extension of the carrier, where the trench extends from the light entrance surface of the sensor arrangement at least to the carrier. Moreover, the method comprises coating the trench with an opaque material, forming electrical contacts for the at least two optical sensor elements on a back side of the carrier facing away from the optical sensor elements, and forming at least one optical sensor by dicing the optical sensor arrangement along the trench. Each optical sensor comprises an optical sensor element, and the light entrance surface is free of electrical contacts and at least partially free of the opaque material above the optical sensor elements. Furthermore, an optical sensor is provided.

Method for manufacturing an optical sensor and optical sensor

A method for manufacturing a semiconductor device comprises the steps of providing a semiconductor body with a main plane of extension, and forming a trench in the semiconductor body from a top side of the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body. The method further comprises the steps of coating inner walls of the trench with an isolation layer, depositing a metallization layer within the trench, and depositing a passivation layer within the trench such that an inner volume of the trench is free of any material, wherein inner surfaces that are adjacent to the inner volume are treated to be hydrophobic at least in places. Furthermore, a semiconductor device is provided.

Method for manufacturing a semiconductor device and semiconductor device

A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.

Crack-resistant semiconductor devices

The semiconductor device for detection of radiation comprises a semiconductor substrate () with a main surface (), a dielectric layer () comprising at least one compound of a semiconductor material, an integrated circuit () including at least one component sensitive to radiation (), a wiring () of the integrated circuit embedded in an intermetal layer () of the dielectric layer (), an electrically conductive through-substrate via () contacting the wiring, and an optical filter element () arranged immediately on the dielectric layer above the component sensitive to radiation. The dielectric layer comprises a passivation layer () at least above the through-substrate via, the passivation layer comprises a dielectric material that is different from the intermetal layer (), and the wiring is arranged between the main surface and the passivation layer.

Semiconductor device for detection of radiation and method of producing a semiconductor device for detection of radiation

A method is proposed to produce an optical sensor at wafer-level, the methods comprises the following steps. A wafer is provided and has a main top surface and a main back surface. At or near the top surface of the wafer at least one integrated circuit is arranged having a light sensitive component. A first mold tool is placed over the at least one integrated circuit such that at least one channel remains between the first mold tool and the top surface to enter a first mold material. A first mold structure is formed by wafer-level molding the first mold material via the at least one channel. The first mold material creates at least one runner structure. A second mold tool is placed over the first mold structure and a second mold structure is formed by wafer-level molding a second mold material by means of the second mold tool. A light path blocking structure is arranged on the top surface to block light from entering via the at least one runner structure.

Method of producing an optical sensor at wafer-level and optical sensor

An optical package is proposed comprising a carrier, an optoelectronic component, an aspheric lens, and a reflective layer. The carrier comprises electrical interconnections and the optoelectric component is arranged for emitting and/or detecting electromagnetic radiation in a specified wavelength range. Furthermore, the optoelectric component is mounted on the carrier or integrated into the carrier and electrically connected to the electric interconnections. The aspheric lens has an upper surface, a lateral surface, and a bottom surface and the bottom surface is arranged on or near the optoelectric component. The aspheric lens comprises a material which is at least transparent in the specified wavelength range. The reflective layer comprises a reflective material, wherein the reflective layer at least partly covers the lateral surface of the aspheric lens, and wherein the reflective material is at least partly reflective in the specified wavelength range.

Optical package and method of producing an optical package

A method of producing an optical sensor at wafer-level, comprising the steps of providing a wafer having a main top surface and a main back surface and arrange at or near the top surface of the wafer at least one first integrated circuit having at least one light sensitive component. Furthermore, providing in the wafer at least one through-substrate via for electrically contacting the top surface and back surface and forming a first mold structure by wafer-level molding a first mold material over the top surface of the wafer, such that the first mold structure at least partly encloses the first integrated circuit. Finally, forming a second mold structure by wafer-level molding a second mold material over the first mold structure, such that the second mold structure at least partly encloses the first mold structure.

A top surface of a substrate is provided with a detection element for detecting electromagnetic radiation. A refractive element is formed by a portion of a cover element, which is attached to the substrate, so that the refractive element is arranged facing the detection element. The refractive element may be arranged within a recess of the cover element, so that a cavity is formed between the detection element and the refraction element.

Optoelectronic device with a refractive element and a method of producing such an optoelectronic device

A dielectric layer () is arranged on the main surface () of a semiconductor substrate (), and a passivation layer () is arranged on the dielectric layer. A metal layer () is embedded in the dielectric layer above an opening () in the substrate, and a metallization () is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface () of the substrate. A layer or layer sequence () comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug () may additionally be arranged in the opening without filling the opening.

Semiconductor device with through-substrate via and corresponding method of manufacture

The method of producing an interposer-chip-arrangement, comprises providing an interposer () with an integrated circuit (), arranging a dielectric layer () with metal layers embedded in the dielectric layer above a main surface () of the interposer, connecting the integrated circuit with at least one of the metal layers, forming an interconnection () through the interposer, the interconnection contacting one of the metal layers, arranging a further dielectric layer () above a further main surface () of the interposer opposite the main surface and arranging a further metal layer in or on the further dielectric layer, the further metal layer being connected with the interconnection, arranging a chip provided with at least one contact pad at the main surface or at the further main surface, and electrically conductively connecting the contact pad with the interconnection.

Method of producing an interposer-chip-arrangement for dense packaging of chips

The semiconductor device comprises a semiconductor wafer with an integrated circuit, formed by a plurality of dies, a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, the semiconductor wafer and the further semiconductor wafer being bonded to one another by means of a bonding layer, and an electrically conductive contact layer arranged on the further semiconductor wafer opposite to the bonding layer.

Semiconductor device for wafer-scale integration

A photosensor () is arranged in a semiconductor substrate () at a main surface (), a dielectric layer () is arranged on or above the main surface, the dielectric layer including a metal layer () electrically connected with the photosensor, and an aperture layer () formed from an opaque or semitransparent material is arranged on or above the dielectric layer. The aperture layer is provided with an array of transparent aperture zones () above the photosensor, each of the aperture zones penetrating the aperture layer.

Semiconductor device comprising an aperture array and method of producing such a semiconductor device

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Graz, Austria

Franz Schrank