Siltectra Gmbh

Franz Schilling

Jan Richter

Marko Swoboda

Christian Beyer

Wolfram Drescher

Ralf Rieske

A method for separating a solid-body layer from a donor substrate includes providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface, and producing modifications within the donor substrate using at least one LASER beam. The at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate. The method further includes producing a stress-inducing polymer layer on the planar surface of the donor substrate, and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer. The mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

Method for forming a crack in an edge region of a donor substrate

The present invention relates to a method for generating control data for the secondary machining of a solid body (), in particular wafer, which is modified by means of laser beams (). The interior of said solid body () has multiple modifications (), said modifications () having been produced by means of laser beams (). The method comprises the following steps: defining a criterion of analysis for analyzing the modifications () produced in the interior of the solid body (); defining a threshold value with respect to the criterion of analysis, an analytical value on one side of the threshold value triggering a secondary machining registration; analyzing the wafer by means of an analytical unit (), said analytical unit () analyzing the modifications () with respect to the criterion of analysis and outputting analytical values regarding the analyzed modifications, said analytical values lying above or below the threshold value; outputting location data with respect to the analyzed modifications, said location data containing information regarding in which region(s) of the solid body () the analytical value lie above or below the threshold value; and generating control data for controlling a laser treatment device () for the secondary machining of the solid body (), said control data comprising at least the location data of the modifications () registered for secondary machining.

Laser conditioning of solid bodies using prior knowledge from previous machining steps

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

Method of treating a solid layer bonded to a carrier substrate

The invention relates to a method for separating solid-body slices () from a donor substrate (). The method comprises the following steps: providing a donor substrate (), producing at least one modification () within the donor substrate () by means of at least one LASER beam (), wherein the LASER beam () penetrates the donor substrate () via a planar surface () of the donor substrate (), wherein the LASER beam () is inclined with respect to the planar surface () of the donor substrate () such that it penetrates the donor substrate at an angle of not equal to 0&#xb0; or 180&#xb0; relative to the longitudinal axis of the donor substrate, wherein the LASER beam () is focused in order to produce the modification () in the donor substrate () and the solid-body slice () detaches from the donor substrate () as a result of the modifications () produced or a stress-inducing layer () is produced or arranged on the planar surface () of the donor substrate () and mechanical stresses are produced in the donor substrate () by a thermal treatment of the stress-inducing layer (), wherein the mechanical stresses produce a crack () for separating a solid-body layer (), which crack propagates along the modifications ().

Method for forming a crack in the edge region of a donor substrate, using an inclined laser beam

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate () for removing a solid layer (), in particular a wafer; producing modifications (), in particular by means of laser beams (), in the donor substrate () in order to specify a crack course; providing a carrier substrate () for holding the solid layer (); bonding the carrier substrate () to the donor substrate () by means of a bonding layer (), wherein the carrier substrate () is provided for increasing the mechanical strength of the solid layer () for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer () on the carrier substrate (); thermally loading the stress-producing layer () in order to produce stresses in the donor substrate (), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer () from the donor substrate () such that the solid layer () is removed together with the bonded carrier substrate ().

Method for the material-saving production of wafers and processing of wafers

The present invention relates to a method for separating solid-body slices () from a donor substrate (). The method comprises the steps of: producing modifications () within the donor substrate () by means of laser beams (), wherein a detachment region is predefined by the modifications (), along which detachment region the solid-body layer () is separated from the donor substrate (), and removing material from the donor substrate (), starting from a surface () extending in the peripheral direction of the donor substrate (), in the direction of the centre (Z) of the donor substrate (), in particular in order to produce a peripheral indentation ().

Method for guiding a crack in the peripheral region of a donor substrate

The present invention relates to a method for separating solid-body slices () from a donor substrate (). The method comprises the steps of: producing modifications () within the donor substrate () by means of laser beams (), wherein a detachment region is predefined by the modifications (), along which detachment region the solid-body layer () is separated from the donor substrate (), and removing material from the donor substrate (), starting from a surface () extending in the peripheral direction of the donor substrate (), in the direction of the center (Z) of the donor substrate (), in particular in order to produce a peripheral indentation ().

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Radeberg, Germany

Franz Schilling