Infineon Technologies Ag

Franz-Peter Kalz

Joachim Mahler

Khalil Hosseini

Manfred Mengel

Horst Theuss

Volker Strutz

Bernhard Winkler

Rainer Markus Schaller

Manfred Fries

Ralf Wombacher

Florian Brandl

Manfred Schindler

Klaus Schmidt

Joachim Voelter

Klaus Elian

Jochen Dangelmaier

A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.

Package with component connected with carrier via spacer particles

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

Deposition of protective material at wafer level in front end for early stage particle and moisture protection

A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.

Semiconductor sensor device and method for fabricating the same

A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 10&#x3a9;&#xb7;cm and 10&#x3a9;&#xb7;cm.

Semiconductor device including antistatic die attach material

A chip arrangement is provided, the chip arrangement, including a carrier; a first chip electrically connected to the carrier; a ceramic layer disposed over the carrier; and a second chip disposed over the ceramic layer; wherein the ceramic layer has a porosity in the range from about 3% to about 70%.

Method for manufacturing a chip arrangement including a ceramic layer

A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Micromechanical semiconductor sensing device

A sensor device includes a semiconductor chip. The semiconductor chip has a sensing region sensitive to mechanical loading. A pillar is mechanically coupled to the sensing region.

Sensor device and method

Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.

Electronic component

A chip package is provided. The chip package may include an electrically conductive carrier; at least one first chip including a first side and a second side opposite of the first side, with its second side being electrically contacted to the electrically conductive carrier; an insulating layer over at least a part of the electrically conductive carrier and over at least a part of the first side of the chip; at least one second chip arranged over the insulating layer and next to the first chip; encapsulating material over the first chip and the second chip; and electrical contacts which extend through the encapsulation material to at least one contact of the at least one first chip and to at least one contact of the at least one second chip.

Chip package and chip assembly

A packaged component and a method for making a packaged component are disclosed. In an embodiment the packaged component includes a component carrier having a component carrier contact and a component disposed on the component carrier, the component having a component contact. The packaged component further includes a conductive connection element connecting the component carrier contact with the component contact, an insulating film disposed directly at least on one of a top surface of the component or the conductive connection element, and an encapsulant encapsulating the component carrier, the component and the enclosed conductive connection elements.

Method for electrophoretically depositing a film on an electronic assembly

A method of manufacturing a chip package is provided. The method may include electrically contacting at least one first chip, the first chip including a first side and a second side opposite the first side, with its second side to an electrically conductive carrier. An insulating layer is formed over at least a part of the electrically conductive carrier and over at least a part of the first side of the chip. At least one second chip is arranged over the insulating layer. An encapsulating material is formed over the first chip and the second chip. Electrical contacts are formed through the encapsulation material to at least one contact of the at least one first chip and to at least one contact of the at least one second chip.

Growing community of inventors

Wuppertal, Germany

Franz-Peter Kalz