Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh

Franz Kuhn-Kuhnenfeld

Hans-Adolf Gerber

Josef Kramler

Franz Kohl

Alfred Buchner

Friedrich Nemetz

Walter Auer

Dietmar Kirsten

Marianne Maier

Gerhard Zechmeister

Point defects or impurities, which are detrimental to the quality of elecnic components, can be eliminated by means of rearsurface damage, which induces dislocations and/or stacking faults, by means of mechanical stress to the semiconductor wafers used in the manufacture of those components. For this purpose, the semiconductor wafers are brought into contact, before polishing, oxidation and thermal treatment, with moving carrier bodies covered with an elastic carrier medium having abrasive grain bonded to it, which creates the desired mechanical stress by forming a large number of very fine scratches and fissures in the surface of the semiconductor wafers.

Process for the backside-gettering surface treatment of semiconductor

For the manufacture of semiconductor wafers with a rear side having a geting action in subsequent oxidation processes by means of the action of light, especially laser, radiation ('laser damage'), there are advantageously chosen wafers with a fine surface structure that contains faces that are inclined by at least 15.degree. in the actual profile by comparison with the geometrically ideal profile of the surface according to known standards. As a result, in comparison to smooth surfaces, considerable savings in energy and time are achieved.

Process for the manufacture of semiconductor wafers with a rear side

A method for producing contrast rich, permanent and slag-free characterizations, particularly on polished semiconductor disks is described, in which the surface for generating the surface pattern is partially melted by laser radiation. According to the invention, a surface segment corresponding to 1.5 to 6.5 times the surface area of the desired surface pattern is irradiated, and the semiconductor material is caused to melt and partially vaporize only in the center thereof.

Method of making reference surface markings on semiconductor wafers by

In the crucible-pulling of crystalline rods by the Czochralski technique, pulling plants that operate with a radiation screen offer a number of advantages. This process is optimized according to the invention by the use of a radiation screen which is joined to a lifting and pivoting mechanism that can be operated throughout the entire pulling process, and which is brought into position above the melt only when the contents of the crucible have been melted.

Process for the manufacture of high-purity monocrystals

An etching agent for III/V semiconductor material consisting of

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Emmerting, Germany

Franz Kuhn-Kuhnenfeld