Infineon Technologies Ag

Franz Kleinbichler

Joachim Hirschler

Karl Mayer

Guenter Zieger

Christian Krenn

Srinivasa Reddy Yeduru

Marco Koitz

Harald Wiedenhofer

Guenther Zoth

In various embodiments, a method of processing a semiconductor device may include providing a semiconductor device comprising a contact pad and a polymer layer; and subjecting at least a part of the contact pad and the polymer layer to a plasma comprising ammonia.

Method of processing a semiconductor device and chip package

In various embodiments, a method of processing a contact pad may include providing a contact pad, a topmost layer of the contact pad containing aluminum or an aluminum alloy, at least part of the topmost layer of the contact pad being exposed; subjecting the contact pad to a thermally activated atmosphere containing water or reactive components of water.

Method of processing a contact pad

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Villach, Austria

Franz Kleinbichler