Siemens Aktiengesellschaft

Siemens and Shell Solar Gmbh

Saint-gobain Glass France

(cnbm) Bengbu Design Research Institute for Glass Industry Co. Ltd

Franz Karg

Hans-Werner Kuster

Volker Probst

Helmut Vogt

Jörg Palm

Walter Stetter

Joerg Baumbach

Martin Fürfanger

Jaap Van Der Burgt

Robert Gass

Jörg Baumbach

The invention relates to an element capable of collecting light, including a first substrate having a glass function and forming a cover, and a second substrate forming a support, the substrates sandwiching between two electrode-forming conductive layers at least one functional layer based on an absorber material for converting light energy into electrical energy, the second substrate provided on its lower face with a plurality of profiles oriented parallel to one of the sides of the element.

Made to elements capable of collecting light

A device for attaching a module for collecting energy originating from solar radiation on a structure such as a roof, a fa&#xe7;ade or a mounting structure of a ground-mounted system, in which the module is provided with at least one fastener on its face designed to be facing the structure. The device includes at least one support secured to the structure by snap-fitting, the fastener and the support being suitable for being coupled to one another for the attachment of the module to the structure.

Solar module attachment device and mounting method

The invention relates to a method for structuring transparent, conductive layers, especially for structuring transparent electrode layers in thin-layer components. The selected wavelength (&lgr;) of the laser used for structuring should fall substantially within the plasma absorption range of the transparent electrode layer and should fulfill following three requirements: a) the wavelength &lgr; of the laser must be greater than the cut-off wavelength &lgr; for optical absorption in the base absorber, b) the wavelength &lgr; of the laser must be greater than the cut-off wavelength for free substrate absorption (plasma absorption) &lgr; in the transparent electrode layer, and c) the wavelength &lgr; of the laser must be less than the cut-off wavelength for metallic reflection &lgr; on the transparent front electrode.

Method for structuring transparent electrode layers

A method and device for thin-film ablation of a substrate of a workpiece, more particularly, for surface layer ablation of a thin-film solar cell. The device comprises a laser resonator for generating a light pulse machining beam having pulse durations smaller than 100 ns and a pulse energy density between 0.1 and 10 J/cm , and a controllable positioner for positioning the workpiece relative to the machining beam such that an amount of energy impinging the surface to be machined is substantially constant for each unit of surface area. The device further includes an optical system arranged in a path of the machining beam, including an optical fiber cable and an optical imaging member for imaging an output of the optical fiber cable on a surface of the workpiece, the optical system being configured such that, in a plane of the surface to be machined, the power distribution is substantially homogenous.

Method and device for thin-film ablation of a substrate

The invention relates to a diode structure, especially for thin film solar cells. The aim of the invention is to provide a diode structure for thin film solar cells. Said structure allows for an assembly of a thin film solar cell, whereby said assembly is as flexible as possible, efficiency is high, and utilizing materials that are as environmentally friendly as possible. A diode structure comprising a p-conducting layer, which consists of a chalcopyrite compound, and a n-conducting layer, which is adjacent to the p-conducting layer and consists of a compound that contains titanium and oxygen, is provided.

Diode structure, especially for thin-film solar cells

Solar cell having a chalcopyrite absorber layer

Rapid process for producing a chalcopyrite semiconductor on a substrate

Light-stable semiconductor material based on amorphous germanium and a

A method for producing a solar cell having a semiconductor layer of copper gallium diselenide covered with a window layer of copper aluminum diselenide by first producing a semiconductor material of one type of conductivity by forming either a copper gallium diselenide or a copper aluminum diselenide and then exchanging metal ions in the upper portion of the layer to provide an opposite type of conductivity by exchanging metal ions of the layer for another type. The exchange can include exchanging both the copper and gallium ions with the zinc ion to form a zinc diselenide window or replacing the gallium ions with aluminum ions to form a copper aluminum diselenide window or, if a copper aluminum diselenide layer had been provided, forming an absorbing layer by replacing the aluminum ions with the gallium ions to form the absorbing layer.

Method for manufacturing a chalcopyrite solar cell

Growing community of inventors

Munich, Germany

Franz Karg