Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Franz Eberhard

Fabian Kopp

Attila Molnar

An optoelectronic semiconductor device may include a first and second semiconductor layer having a first and second conductivity type, respectively, a first contact structure, a contact layer, and a separating layer. Contact holes are arranged in the separating layer. The optoelectronic semiconductor device may include portions of a conductive layer arranged over a side of the separating layer facing away from the contact layer. The portions of the conductive layer are each connected to a conducting material in the contact holes. The first contact structure is connected to the contact layer via the portions of the conductive layer and the conducting material. A length of each of the portions is greater than a greatest width of the portions. The length denotes a shortest distance between an associated contact hole and a conductive material between adjacent portions, and the width is measured perpendicular to the length.

Optoelectronic semiconductor device comprising portions of a conductive layer and method for manufacturing an optoelectronic semiconductor device

An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The optoelectronic semiconductor component further comprises, on the side of the first main surface, a first current spreading structure electrically connected to the first semiconductor layer and a second current spreading structure electrically connected to the second semiconductor layer. The optoelectronic semiconductor component furthermore includes a dielectric mirror layer arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer. At least one of the first and second current spreading structures contains silver.

Optoelectronic semiconductor component with a current spreading structure containing silver, and optoelectronic device

An optoelectronic semiconductor device may include a first semiconductor layer and a second semiconductor layer, the first and second semiconductor layers being stacked one above the other. The device may include a first contact structure and a contact layer. The device may include a separating layer arranged over a side of the contact layer, and a current spreading layer arranged over a side of the separating layer facing away from the contact layer. The first contact structure may be connected to the contact layer via the current spreading layer and the separating layer. A layer stack may include the contact layer, the separating layer, and the current spreading layer has an anisotropic conductivity. The separating layer is present as a continuous layer in a region between the contact layer and the current spreading layer.

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Kilchberg, Switzerland

Franz Eberhard