Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Franz Eberhard

Fabian Kopp

Korbinian Perzlmaier

Wolfgang Schmid

Attila Molnar

Berthold Hahn

Johannes Baur

Andreas Weimar

Robert Walter

Raimund Oberschmid

Bjoern Muermann

Uwe Strauss

Andreas Ploessl

Stephan Kaiser

Michael Fehrer

Ewald Karl Michael Guenther

Ulrich Zehnder

Heribert Zull

Markus Richter

Wilhelm Stein

Mathias Kämpf

Thomas Veit

Matthias Winter

Jens Dennemarck

Michael Schmal

Peter Brick

Ralph Wirth

Volker Härle

Matthias Sabathil

Stefan Grötsch

Stephan Lutgen

Jürgen Moosburger

Tony Albrecht

Martin Rudolf Behringer

Reiner Windisch

Krister Bergenek

Julius Muschaweck

Norbert Linder

Klaus Streubel

Johann Luft

Thomas Schlereth

Sebastian Taeger

Markus Broell

Magnus Ahlstedt

Michael Huber

Vincent Grolier

Jörg Strauss

Peter Holzer

Benjamin Michaelis

Björn Muermann

Johannes Unger

Katharina Christoph

In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

Radiation-emitting semiconductor chip

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer

In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

A radiation-emitting semiconductor chip includes a semiconductor body; a first contact layer having a first contact surface for external electrical contacting of the semiconductor chip and a first contact web structure connected to the first contact surface, wherein the first contact web structure is a region of the first contact layer that, compared to the first contact surface, has a comparatively small extent at least in a lateral direction; a second contact layer, wherein first and second contact web structures overlap in places in plan view of the semiconductor chip; a current distribution layer; and an insulation layer having a plurality of openings into which the current distribution layer extends.

Radiation-emitting semiconductor chip with overlapping contact layers

A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductivity type, an active region configured to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction, an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation, a radiation coupling-out region surrounding the electrical contact metallization at an edge side and an absorber layer structure arranged between the electrical contact metallization and the second region.

Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

An optoelectronic semiconductor chip and a method for manufacturing an optoelectronic semiconductor chip are disclosed. In an embodiment the semiconductor chip includes a semiconductor body having a main surface and at least one side surface arranged transversely to the main surface, a contact layer arranged on the main surface of the semiconductor body and containing an electrically conductive material, a filter layer arranged on the contact layer and containing a dielectric material and a conductive layer arranged on the filter layer and containing an electrically conductive material, wherein a thickness of the conductive layer is greater than a thickness of the contact layer, wherein the contact layer and the conductive layer comprise a transparent electrically conductive oxide, and wherein the filter layer is multi-layered and comprises at least two sublayers which differ in their refractive index.

Optoelectronic semiconductor chip and method for manufacturing an optoelectronic semiconductor chip

A method for producing a semiconductor body is disclosed. In an embodiment, the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening. The method further includes applying a passivation layer unpatterned to the second mask layer and to the side face and the bottom face of the at least one recess and removing the passivation layer so that the passivation layer remains at least in part on the side face of the at least one recess.

Method for producing a semiconductor body

A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. The method further includes applying a contact layer to the first mask layer and the bottom face of the at least one recess using a directional deposition method and applying a passivation layer to the side face of the at least one recess.

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Method of producing a semiconductor body

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.

An optoelectronic semiconductor body () having an active semiconductor layer sequence () and a reflective layer system () is described. The reflective layer system () comprises a first radiation-permeable layer (), which adjoins the semiconductor layer sequence (), and a metal layer () on the side of the first radiation-permeable layer () facing away from the semiconductor layer sequence (). The first radiation-permeable layer () contains a first dielectric material. Between the first radiation-permeable layer () and the metal layer () there is disposed a second radiation-permeable layer () which contains an adhesion-improving material. The metal layer () is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer () is improved in comparison with the adhesion on the first dielectric material.

Optoelectronic semiconductor bodies having a reflective layer system

A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.

Thin-film encapsulation, optoelectronic semiconductor body comprising a thin-film encapsulation and method for producing a thin-film encapsulation

An optoelectronic semiconductor chip, comprising: a radiation out-coupling side (); a contact connection (); a metal contact material () applied to the radiation out-coupling side () and a metal conductive connection () applied to the contact material () and which is connected to the contact connection ().

Optoelectronic semiconductor chip and method for fabricating an optoelectronic semiconductor chip

A radiation-emitting body comprising a layer sequence, having an active layer () for generating electromagnetic radiation, having a reflection layer (), which reflects the generated radiation, and having at least one intermediate layer () arranged between the active layer () and the reflection layer (). In this case, the active layer () has a roughening on an interface () directed toward the reflection layer (), and the reflection layer () is substantially planar at an interface () directed toward the active layer (). Also disclosed is a method for producing a radiation-emitting body, which involves forming a layer sequence on a substrate having an active layer () for generating electromagnetic radiation. In this case, the method comprises roughening an interface () on the active layer (), and forming at least one intermediate layer () and a reflection layer ().

Radiation emitting body and method for producing a radiation-emitting body

Growing community of inventors

Wuppertal, Germany

Franz Eberhard