Siemens Aktiengesellschaft

Infineon Technologies Ag

Infineon Technologies Austria Ag

Franz Auerbach

Jenoe Tihanyi

Karl Weidner

Heinrich Brunner

Gerald Deboy

Oliver Haeberlen

Michael Treu

Jörg Zapf

Thomas Laska

Thomas Licht

Gerhard Miller

Alfred Porst

Norbert Seliger

Hans Martin Weber

Kathrin Rueschenschmidt

Bernd Gutsmann

One aspect includes a semiconductor device with self-aligned contacts, integrated circuit and manufacturing method. One embodiment provides gate control structures. Each of the gate control structures is configured to control the conductivity of a channel region within a silicon carbide substrate by field effect. A contact hole is self-aligned to opposing sidewalls of adjacent gate control structures by intermediate spacers.

SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method

In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.

Electrical component on a substrate and method for production thereof

An electrical component is placed on a substrate. At least one film comprising a plastic material is connected to the component and to the substrate in such a way that a surface contour defined by the component and the substrate is represent is represented in a surface contour of the part of the film. Said film is laminated onto the component and the substrate in such a way that the film follows the topology of the arrangement consisting of the component and the substrate. Said film is in contact with the component and the substrate in a positive and non-positive manner, and comprises a composite material containing a filler that is different to the plastic material. The processability and electrical properties of the film are influenced by the filler or the composite material obtained thereby. In this way, other functions can be integrated into the film. Said component is, for example, a power semiconductor component. An electrically insulating and thermoconductive film is used, for example. A contact surface of the power semiconductor is electrically contracted through the film. The thermal conductivity of the film enables heat created during the operation of the power semiconductor component to be efficiently carried away.

Arrangement of an electrical component placed on a substrate, and method for producing the same

A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.

Semiconductor component having field-shaping regions

The compensation component is formed with compensation regions in a semiconductor between two electrodes. By varying the second field and/or the first field, a location of a maximum field strength is displaced into the center of the compensation regions between the electrodes.

Compensation component with improved robustness

A method for forming a field effect vertical bipolar transistor that includes a semiconductive body that has at its top surface a plurality of emitter zones of one conductivity type, each surrounded by a base zone of the opposite conductivity type, and gate electrodes for creating a channel at the surface through the base zone into the bulk inner portion of the one conduction type and at a bottom surface a collector zone that includes a collector electrode overlying a collector layer of the opposite conduction type overlying a field stop layer heavily doped of the opposite conduction type overlying the inner portion lightly doped of the one conduction type. Each of the collector layer and the field stop layer is less than 2 microns in thickness and the collector layer is used to inject minority carriers into the inner zone when appropriately biased.

Bipolar transistor which can be controlled by field effect and method for producing the same

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Munich, Germany

Franz Auerbach