Evatec Ag

Oc Oerlikon Balzers Ag

Oc Oerlikon Blazers Ag

Frantisek Balon

Stanislav Kadlec

Juergen Weichart

Bart Scholte Van Mast

Jurgen Weichart

Jürgen Weichart

Mohamed Elghazzali

Ben Curtis

A plasma etching chamber including within a vacuum recipient: an etching compartment with a central axis and a surrounding wall enclosing the etching compartment; a pumping compartment with a metal surrounding wall having a feed through opening; a metal partition wall traverse to the axis separating the etching compartment from the pumping compartment; a pumping slit in or along the partition wall; a workpiece support; a metal tubular arrangement through the opening, including a first part coupled to the workpiece support and a second part coupled to the metal surrounding wall, the second part being electrically conductively joint to the metal surrounding wall; an Rf feed line through the tubular arrangement connected to the workpiece support; a system ground connector at an end of the second part; distributed metal connectors establishing electric contact from the metal surrounding wall, across the pumping slit via the partition wall to the first part.

Plasma etch chamber and method of plasma etching

A vacuum treatment chamber includes a vacuum recipient and therein a screen. Within the screen there is provided a stationary substrate support. Within the side wall of the vacuum recipient, there is provided a substrate handling opening and in the screen, a substrate handling cut-out. A drivingly, moveable screen-shutter frees or covers the substrate handling cut-out in the screen. Thereby, horizontal loading and un-loading (L/UL) of a substrate to the stationary substrate support is possible, although establishing an overall closed screen, once a substrate is treated in the vacuum treatment chamber.

Vacuum treatment chamber and method of manufacturing a vacuum treated plate-shaped substrate

A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency &#x3c9;, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency &#x3c9; of rotation of the magnet other than the first harmonic.

Method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source

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Buchs SG, Switzerland

Frantisek Balon