Agere Systems Inc.

Other

Lucent Technologies Inc.

At&t Bell Laboratories

Franklin Richard Nash

Gustav Edward Derkits, Jr

Leslie Marchut

Eugene I Gordon

Robert Louis Hartman

John Lopata

Paul Michael Bridenbaugh

A semiconductor device such as a photodetector has a substrate having an active region layer containing an active region of the device. A dielectric layer is disposed on the active region layer, and a metal active region contact is disposed in the dielectric layer above the active region and electrically contacting the active region. A metal electrostatic discharge (ESD)protection structure is disposed in the dielectric layer around the active region contact, wherein the ESD protection structure electrically contacts the active region layer of the substrate to provide an ESD discharge path for charge on the surface of the dielectric layer.

ESD resistant device

A semiconductor device such as a photodetector has a substrate having an active region layer containing an active region of the device. A dielectric layer is disposed on the active region layer, and a metal active region contact is disposed in the dielectric layer above the active region and electrically contacting the active region. A metal electrostatic discharge (ESD) protection structure is disposed in the dielectric layer around the active region contact, wherein the ESD protection structure electrically contacts the active region layer of the substrate to provide an ESD discharge path for charge on the surface of the dielectric layer.

Disclosed is an optical and/or microelectronics hermetic package which includes a member for absorbing hydrogen from the internal package ambient. The member includes a first layer which forms a hydride and, formed thereover, a second layer which forms solvated hydrogen upon exposure to molecular hydrogen in the package. The second layer acts as a one way valve for transporting hydrogen to the first layer which locks up the hydrogen.

Structure for absorption of hydrogen in a package

The specification describes a test procedure for evaluating the susceptibility of electronic and photonic device packages to degradation effects caused by ambient hydrogen in the device package during the service life of the packaged device. The test procedure uses a hydrogen soak in which the subassembly parts are immersed in high concentrations of hydrogen gas at moderately elevated temperatures. The hydrogen gas is preferably diluted with an inert gas such as nitrogen or argon for safety in handling and processing. The test procedure can be used to screen components once their susceptibility to hydrogen attack has been established.

Method for testing and screening electronic and photonic packages for

Prior to packaging, semiconductor lasers are purged by being subjected first to high temperature and high current simultaneously so as to suppress stimulated emission and stress the shunt paths which allow leakage current to flow around the active region. A prudent, but nonessential, second step is to lower the temperature and/or current so that the lasers emit stimulated emission (preferably strongly, near the peak output power), thereby stressing the active region. Lasers subjected to such a purge exhibit stabilized degradation rates in short times (of the order of a few hours) and provide a robust population which meets the performance criteria of long lifetime systems.

Growing community of inventors

Princeton, NJ, United States of America

Franklin Richard Nash