Infineon Technologies LLC

Franklin Brodsky

Shan Sun

Fan Chu

Alan D DeVilbiss

Kapil Jain

Edwin Kim

Patrick O'Connell

Patrick F O'connell

A method of operating a memory device that includes the steps of receiving a read command and a target address in a non-volatile memory (NVM) array, in which the NVM array is divided into a plurality of blocks based on row and column addresses, performing a read operation on NVM cells in the target address and coupling an output of each NVM cell read to a sensing circuit, generating a local reference voltage based on a base reference voltage and an adjustment reference voltage corresponding to the target address of the NVM cells being read and a block that the NVM cells belong thereto, and offsetting the base reference voltage with the adjustment reference voltage, and coupling the local reference voltage to the sensing circuit. Other embodiments are also described.

Local reference voltage generator for non-volatile memory

A memory device including a reference voltage (V) generator and method for operating the same to improve memory sensing margin, and extend operational temperature range and life of the device are disclosed. Generally, the device further includes an array of non-volatile memory cells divided into a plurality of blocks, a sensing circuit coupled to the array to receive and compare memory signals therefrom to the Vto read data from the cells. The Local reference voltage generator is configured to provide one of a number of reference voltages to the sensing circuit based on which of the blocks is being read. The array can be divided based on row and column addresses of cells in the blocks. Where the cells include 1T1C ferroelectric random access memory (F-RAM) cells, and the reference voltages are selected based on a lowest P-term or highest U-term of the cells in the block being read.

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Colorado Springs, CO, United States of America

Franklin Brodsky