Rfhic Corporation

Element Six Technologies Limited

Frank Yantis Lowe

Daniel Francis

Firooz Nasser-Faili

Quentin Diduck

Daniel James Twitchen

Felix Ejeckam

Firooz Faili

Kristopher Matthews

Dubravko Babić

Sergey Zaytsev

Daneil James Twitchen

Felix Ejeckham

Firooz Nasser-faili

Joseph Smart

A method of fabricating a semiconductor device structure includes: providing a substrate comprising a layer of compound semiconductor material; forming a seed layer of nano-crystalline diamond having a layer thickness in a range 5 to 50 nm on the layer of compound semiconductor material; and growing a layer of polycrystalline CVD diamond on the seed layer using a chemical vapour deposition (CVD) technique. An effective thermal boundary resistance (TBR) at an interface between the layer of compound semiconductor material and the layer of polycrystalline CVD diamond material is no more than 50 mK/GW.

Methods for fabricating semiconductor devices that have polycrystalline CVD diamond

Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

Handle for semiconductor-on-diamond wafers and method of manufacture

Methods of fabricating compound semiconductor device structures having polycrystalline CVD diamond. The method includes: providing a substrate that has a layer of single crystal compound semiconductor material; forming a bonding layer on a surface of the substrate, the bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm; and growing a layer of polycrystalline diamond on the bonding layer using a chemical vapor deposition technique. The effective thermal boundary resistance at the interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 mK/GW. The layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cmVs; and a sheet resistance of no more than 700 &#x3a9;/square.

Method of fabricating compound semiconductor device structures having polycrstalline CVD diamond

A semiconductor device structure comprising:

Compound semiconductor device structures comprising polycrystalline CVD diamond

A semiconductor device structure includes a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material. The layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm. The effective thermal boundary resistance as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 mK/GW with a variation of no more than 12 mK/GW as measured across the semiconductor device structure. The layer of single crystal compound semiconductor material has one or both of the following characteristics:

Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers () to a carrier () are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

Growing community of inventors

Phoenix, AZ, United States of America

Frank Yantis Lowe