Infineon Technologies Ag

Frank Weber

Gerd Frankowsky

Josef Maynollo

Marcus Culmsee

Jens M&ouml;ckel

Martin Fritz

Michael H&uuml;bner

Gerrit F&auml;rber

A method of fabricating a cleaning solvent for removing a residue, the method comprising: compiling a database that includes solvents and a set of solvent solubility parameters for a large plurality of perspective solvents; selecting from the large plurality of perspective solvents a small plurality of test solvents; measuring an amount of the residue dissolved by each member of the small plurality of test solvents; calculating a set of solute solubility parameters for the residue by combining solvent solubility parameters of the small plurality of test solvents in proportion to an amount of residue dissolved by each member of the small plurality of test solvents; and mixing at least two solvents from the large plurality of perspective solvents to form a mixture so that a set of solvent solubility parameters for the mixture approximates the set of solute solubility parameters for the residue.

Method of fabricating semiconductor cleaners

A method of manufacturing cleaning solvents is provided. The method includes selecting a small plurality of test solvents from a large plurality of perspective solvents. The equilibrium composition of a multi-component solution is preferably described by the Hansen solubility model. A small plurality of test solvents is applied to solute samples and the degree of dissolution or swelling recorded. Based on the degree of dissolution or swelling, at least one solvent is selected from the large plurality of perspective solvents based on the Hansen parameters.

A method of manufacturing cleaning solvents is provided. The method includes selecting a small plurality of test solvents from a large plurality of perspective solvents. The equilibrium composition of a multi-component solution is preferably described by the Hansen solubility model. A small plurality of test solvents is applied to solute samples and the degree of dissolution or swelling recorded. Based on the degree of dissolution or swelling, at least one solvent is selected from the large plurality of perspective solvents based on the Hansen parameters. In other embodiments, the three-parameter Hansen solubility model includes additional parameters that enable more accurate solubility predictions. In one embodiment, an additional parameter accounts for oxidizing solution components. In an alternative embodiment, an additional parameter accounts for the acidic/basic property of the solution. Still another embodiment accounts for temperature effects.

Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A manufacturing method comprises forming a layer of silicon over a substrate, forming an opening through the layer of silicon, filling the opening with a conductor; and anodically etching the layer of silicon so as to form porous silicon. Embodiments may further include passivating the porous silicon such as by treating its surface with an organometallic compound. Other embodiments of the invention provide a semiconductor device comprising a layer comprising functional devices; and an interconnect structure over the layer, wherein the interconnect structure comprises a porous silicon dielectric. In an embodiment of the invention, the interconnect structure comprises a dual damascene interconnect structure. Other embodiments may include a passivation step after the step of oxidizing the porous silicon.

Porous silicon dielectric

A method of improving the effectiveness of semiconductor cleaning solvents is provided. Insoluble gas bubbles, typically air, hinder wet chemical cleaning methods. Preferred embodiments include purging a first, insoluble gas from the cleaning system and replacing it with a second, soluble gas. After replacing the first gas with the second gas, the wafer is rinsed in the cleaning solvent. Any gas bubbles trapped within narrow, recessed features during cleaning rapidly dissolve due to the second gas's solubility. Temperature adjustments during the process may further enhance cleaning.

Method of degasification in semiconductor cleaning

Methods of fabricating semiconductor devices are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece including a plurality of active area regions defined therein, and forming at least one trench in the workpiece between at least two of the plurality of active area regions. A first insulating material is deposited over the plurality of active area regions and the at least one trench, partially filling the at least one trench with the first insulating material and forming peaks of the first insulating material over the plurality of active area regions. A masking material is formed over the first insulating material in the at least one trench, leaving the peaks of the first insulating material over the plurality of active area regions completely exposed. At least the peaks of the first insulating material are removed from over the plurality of active area regions.

Semiconductor device fabrication methods

A method of repairing damaged low-k dielectric materials is disclosed. Plasma-based processes, which are commonly used in semiconductor device manufacturing, frequently damage carbon-containing, low-k dielectric materials. Upon exposure to moisture, the damaged dielectric material may form silanol groups. In preferred embodiments, a two-step approach converts the silanol to a suitable organic group. The first step includes using a halogenating reagent to convert the silanol to a silicon halide. The second step includes using a derivatization reagent, preferably an organometallic compound, to replace the halide with the suitable organic group. In a preferred embodiment, the halogenating agent includes thionyl chloride and the organometallic compound includes an alkyllithium, preferably methyllithium. In another preferred embodiment, the organometallic compound comprises a Grignard reagent. Embodiments disclosed herein advantageously enable the manufacturer to engineer the density, polarization, and ionization properties of the low-k dielectric material by selective incorporation of the organic group.

Repair of carbon depletion in low-k dielectric films

Test system for testing integrated chips and an adapter element for a test system. One embodiment provides a test system for testing integrated chips in a burn-in test operation, the integrated chips to be tested being arranged in groups on a burn-in board, the burn-in board having a first connecting device in order to connect the burn-in board to a tester device, the tester device comprising a test module with a test circuit in order to test chips on the burn-in board in accordance with the burn-in test operation, the test module having a second connecting device in order to connect the burn-in board to the test module via the second connecting device, a plurality of test modules being provided, the second connecting devices of which can be contact-connected to a plurality of third connecting devices of an adapter element, the adapter element having a fourth connecting device for contact-connection of the first connecting device of the burn-in board, the third connecting devices of the adapter element being connected to the fourth connecting device in such a way that, in the contact-connected state, it is possible to test each integrated circuit of a group with one of the test modules.

Test system for testing integrated chips and an adapter element for a test system

In preferred embodiments, a polydentate pore-sealing ligand is used to seal or repair pores damaged by plasma processing. The polydentate ligand includes bidentate ligands corresponding to the general formula X&#x2014;CH&#x2014;(CH)&#x2014;CH&#x2014;X or X&#x2014;Si(CH)&#x2014;(CH)&#x2014;Si(CH)&#x2014;X. The polydentate ligand also includes tridendate ligands corresponding to the general formula X&#x2014;CH&#x2014;(CH)(CXH)(CH)&#x2014;CH&#x2014;X or X&#x2014;Si(CH)&#x2014;(CH)(CXH)(CH)&#x2014;Si(CH)&#x2014;X. Alternative embodiments may include single or multiply branched polydentate ligands. Other embodiments include ligands that are cross-linked after attachment to the dielectric. Still other embodiments include a derivatization reaction wherein silanol groups formed by plasma damage are removed and favorable dielectric properties are restored.

Using polydentate ligands for sealing pores in low-k dielectrics

A method for releasable contact-connection of a plurality of integrated semiconductor modules on a wafer, each of which having a plurality of interconnected supply voltage terminals, includes the steps of providing a contacting card for applying external electrical signals to the semiconductor modules with contact elements for releasable electrical connection to terminal pads of the semiconductor modules, aligning the contacting card with the wafer, producing a releasable contact between terminal pads of the plurality of semiconductor modules and the contact elements of the contacting card, checking the contact quality for each of the semiconductor modules by applying a voltage to at least one of the supply voltage terminals of the semiconductor module through the contacting card, measuring the voltage present at a further one of the supply voltage terminals through the contacting card, and using the measurement result to assess whether or not the semiconductor module has correct contact.

Growing community of inventors

Egmating, Germany

Frank Weber