Infineon Technologies Ag

Infineon Technologies Austria Ag

Frank Wagner

Paul Frank

Oliver Schilling

Joachim Seifert

Werner Robl

Evelyn Napetschnig

Stefan Woehlert

Sven Schmidbauer

Tobias Schmidt

Kamil Karlovsky

Michael Ehmann

Eric Graetz

Gretchen Adema

Thomas Heinelt

Thomas Bertaud

Ulrich Wilke

Altan Toprak

Lars Boewer

Roman Immel

A semiconductor device includes a semiconductor die including a first side and an opposing second side, a first metallization layer arranged on the first side, a Ni including layer arranged on the second side, wherein the Ni including layer further includes one or more of Si, Cr and Ti, and a SnSb layer arranged on the Ni comprising layer, wherein an amount of Sb in the SnSb layer is in the range of 2 wt % to 30 wt %.

Semiconductor device with a nickel comprising layer and method for fabricating the same

A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.

Semiconductor device having a layer stack, semiconductor arrangement and method for producing the same

Semiconductor device, semiconductor arrangement and method for producing the same

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Electronic device, electronic module and methods for fabricating the same

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Ruethen, Germany

Frank Wagner