Infineon Technologies Ag

Infineon Technologies Austria Ag

Frank Umbach

Hans-Joachim Schulze

Holger Schulze

Roman Roth

Manfred Pfaffenlehner

Frank Hille

Thomas Laska

Ravi Keshav Joshi

Carsten Schaeffer

Juergen Steinbrenner

Oliver Humbel

Michael Fugger

Anton Mauder

Frank Dieter Pfirsch

Francisco Javier Santos Rodriguez

Franz-Josef Niedernostheide

Gerhard Schmidt

Matteo Dainese

Franz Josef Niedernostheide

Elmar Falck

Thomas Gutt

Philip Christoph Brandt

Hans Peter Felsl

Christoph Weiss

Kirill Trunov

Niels Oeschler

Steffen Schmidt

Matthias Mueller

Matthias Müller

Karin Buchholz

Andreas Korzenietz

Damiano Cassese

A method of producing a power semiconductor device includes: providing a semiconductor body; forming, at the semiconductor body, a polycrystalline semiconductor region; forming, at the polycrystalline semiconductor region, an amorphous sublayer; subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer; and forming a metal layer at the re-crystallized sublayer.

Power semiconductor device and method of producing a power semiconductor device

A power semiconductor device includes a semiconductor body having a drift region of a first conductivity type inside an active region. An edge termination region includes: a guard region of a second conductivity type at a front side of the semiconductor body and surrounding the active region; and a field plate trench structure extending vertically into the body from the front side and at least partially filled with a conductive material that is electrically connected with the guard region and insulated from the body external of the guard region. A first portion of the field plate trench structure at least partially extends into the guard region and is at least partially arranged below a metal layer arranged at the front side. A second portion of the field plate trench structure extends outside of the guard region and surrounds the active area, the metal layer not extending above the second portion.

Power semiconductor device and method of processing a power semiconductor device

A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.

Vertical semiconductor device

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.

Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.

Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

A method for forming a semiconductor device includes forming an insulating material layer above a semiconductor substrate and modifying at least a portion of a surface of the insulating material layer after forming the insulating material layer. Further, the method includes forming an electrical conductive structure on at least the portion of the surface of the insulating material layer after modifying at least the portion of the surface of the insulating material layer.

Semiconductor devices and methods for forming a semiconductor device

A semiconductor chip includes a semiconductor body and a chip metallization applied on the semiconductor body. The chip metallization has an underside facing away from the semiconductor body. The chip further includes a layer stack applied to the underside of the chip metallization and having a number N&#x2267;1 or N&#x2267;2 of first partial layers and a number N&#x2267;2 of second partial layers. The first partial layers and the second partial layers are arranged alternately and successively such that at least one of the second partial layers is arranged between the first partial layers of each first pair of the first partial layers and such that at least one of the first partial layers is arranged between the second partial layers of each second pair of the second partial layers.

Semiconductor chip, method for producing a semiconductor chip and method for soldering a semiconductor chip to a carrier

A semiconductor device includes a semiconductor substrate having a first side, at least a first area formed in the semiconductor substrate, at least a second area formed in the semiconductor substrate, a first metal layer structure having at least a first metal portion in the first area and at least a second metal portion in the second area, and a second metal layer structure on and in ohmic contact with the first metal portion in the first area while leaving the second metal portion of the first metal layer structure in the second area uncovered. The second metal layer structure and the first metal portion of the first metal layer structure form together a common metallization structure on the first side of the semiconductor substrate in the first area.

Semiconductor device having a locally reinforced metallization structure

A semiconductor device has a semiconductor body including opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor region formed in the semiconductor body, an edge region surrounding the active semiconductor region, a first semiconductor zone of a first conduction type formed in the edge region, an edge termination structure formed in the edge region at the top side, and a shielding structure arranged on that side of the edge termination structure facing away from the bottom side. The shielding structure has a number of N1&#x2267;2 first segments and a number of N2&#x2267;1 second segments. Each of the first segments is electrically connected to each of the other first segments and to each of the second segments, and each of the second segments has an electric resistivity higher than an electric resistivity of each of the first segments.

Semiconductor device with a shielding structure

A method for forming a semiconductor device includes providing a semiconductor substrate having a first area and a second area. A first metal layer structure is formed which includes at least a first metal portion in the first area and a second metal portion in the second area. A plating mask is formed on the first metal layer structure to cover the second metal portion, and a second metal layer structure is plated on and in ohmic contact with the first metal portion of the first metal layer structure.

Semiconductor device having a locally reinforced metallization structure and method for manufacturing thereof

A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

Method for manufacturing a semiconductor substrate including laser annealing

A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity type is in contact with the drift region and the body region and is arranged at a distance from the trench.

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Munich, Germany

Frank Umbach