Advanced Micro Devices Corporation

Frank Tsai

Harry Jay Levinson

Cyrus E Tabery

Bruno M LaFontaine

Ivan Lalovic

Gilles Amblard

Adam R Pawloski

Amr Yehia Abdo

Jeffrey A Schefske

A process for fabricating a semiconductor device, including applying an immersion lithography medium to a surface of a semiconductor wafer; exposing a material on the surface of the semiconductor wafer to electromagnetic radiation having a selected wavelength; and applying supercritical carbon dioxide to the semiconductor wafer to remove the immersion lithography medium from the surface of the semiconductor wafer. In one embodiment, the process includes recovery of the immersion lithography medium.

Method for removal of immersion lithography medium in immersion lithography processes

A method of operating an immersion lithography system, including steps of immersing at least a portion of a wafer to be exposed in an immersion medium, wherein the immersion medium comprises at least one bubble; directing an ultrasonic wave through at least a portion of the immersion medium to disrupt and/or dissipate the at least one bubble; and exposing the wafer with an exposure pattern by passing electromagnetic radiation through the immersion medium subsequent to the directing. Also disclosed is a monitoring and control system for an immersion lithography system.

Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems

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Saratoga, CA, United States of America

Frank Tsai