Ion Beam Services

Cnm - Csic

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Frank Torregrosa

Laurent Roux

Philippe Godignon

Thibaut Desrues

Adeline Lanterne

Coralie Lorfeuvre

A MOSFET device arranged on a substratehaving first and second heavily-doped stripsandrespectively covered by first and second contactsand, these two strips being spaced apart by a channelthat also appears on the substrate, the channel being covered by a dielectric layer, itself surmounted by a third contact. The channelincorporates a thin filmlightly doped with dopant atoms of a same type as the channel, at the interface with the dielectric layer, the dopant atoms being distributed on both sides of the interface.

Device for improving the mobility of carriers in a MOSFET channel on silicon carbide

The present invention provides a support that comprises: The support also has at least one electrically conductive element--for connecting the bearing plane to the shoulder

Support including an electrostatic substrate carrier

A method of controlling an implanter operating in plasma immersion, the method including the steps of: The method is remarkable in that the duration of the expulsion stage is longer than 5 &#x3bc;s. The invention also provides a power supply for biasing an implanter.

Method of controlling an implanter operating in plasma immersion

The present invention relates to a support comprising: The support is remarkable in that the substrate carrier () incorporates a heating resistance ().

Electrostatic heating substrate holder which is polarised at high voltage

The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising:

Method of controlling an ion implanter in plasma immersion mode

An ion implantation machine includes an enclosure that is connected to a pump device, a negatively polarized substrate-carrier that is arranged inside the enclosure, and a plasma feed device in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber provided with an ionization cell, the main chamber being provided with a gas delivery orifice, and the final section of the main chamber being provided with a head-loss component for creating a pressure drop relative to the body. Furthermore, the plasma feed device also includes an auxiliary chamber arranged beyond the final section, the auxiliary chamber opening out into the enclosure at the terminal section.

Machine for implanting ions in plasma immersion mode for a low-pressure method

The present invention relates to an ion implantation machinethat comprises: The machine is remarkable in that:

Ion implantation machine presenting increased productivity

The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS, CSfree from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI-BCS, BCI-BCSper source body CS, CS

Ion implanter provided with a plurality of plasma source bodies

A control module for an ion implanter having a power supply, the power supply comprising: an electricity generator HT having its positive pole connected to ground; a first switch SWhaving its first pole connected to the negative pole of the generator HT and having its second pole connected to the outlet terminal S of the power supply; and a second switch SWhaving its first pole connected to the outlet terminal S and having its second pole connected to a neutralization terminal N. The control module also comprises a current measurement circuit AMP for measuring the current that flows between the second pole of the second switch SWand the neutralization terminal N.

Control module for an ion implanter

The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes:

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Simiane, France

Frank Torregrosa