Motorola Corporation

Frank T Secco d'Aragona

Francine Y Robb

Israel A Lesk

Lewis E Terry

Raymond C Wells

David D Oliver

Removing a portion of an active wafer (12) at the edge (18) after the active wafer (12) is bonded to a base wafer (10) prevents chipping of the edge of the active wafer during thinning of the active wafer (12). Grinding and polishing of the edges of the active wafer (12) is preferably performed.

Method of bonding a semiconductor wafer

A plurality of doped areas (12, 13, 14) are formed on a surface of a semiconductor wafer. A titanium nitride layer (17) is used for covering the plurality of doped areas (12, 13, 14) and for providing electrical connection between the doped areas (12, 13, 14). The titanium nitride layer (17) substantially prevents dopants from diffusing into the titanium nitride (17) and subsequently counterdoping the doped areas (12, 13, 14) during subsequent high temperature processing operations.

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Scottsdale, AZ, United States of America

Frank T Secco d'Aragona