L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Softal Electronic Gmbh

Frank Slootman

Pascal Bouard

Dominique Jouvaud

Eckhard Prinz

Francedillaois Coeuret

Nicolas Perrin

Frederic Viraize

A product substrate coated with a uniform deposit of silicon oxide created by subjecting the substrate to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.

Silicon oxide on a substrate

A charge of scrap is melted in a furnace (1) with post-combustion of the fumes by injection of an oxygenated gas into the space in the furnace above the charge. During periods of post-combustion, the oxygenated gas is injected in the form of several jets each having a flow rate comprised between about 400 and 1200 Nm.sup.3 /h and an injector (11, 12) outlet speed comprised between about 50 and 150 m/s, preferably between about 500 and 900 Nm.sup.3 /h and between about 70 and 125 m/s. Several groups of injectors (11, 12) are used, having an outlet tangential component relative to the vertical axis (X--X) of the furnace (1), successive groups of injectors being disposed at different levels (N.sub.1, N.sub.2) and oriented in alternate circumferential directions. A portion of these injectors have a circumferential component in a first direction and a downward component at a first angle relative to the horizontal, and the other injectors have a circumferential component in an opposite direction and a downward component at a second angle different from the first angle. The oxygenated gas is oxygen having a purity of at least 90%.

Process for melting a charge in a furnace

A device for creating a deposit of silicon oxide on a traveling solid substrate, wherein the substrate is subjected to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.

Device for creating a deposit of silicon oxide on a traveling solid

According to the process the substrate (2) is subjected to an electrical discharge with a dielectric barrier, for example a discharge in the presence of an atmosphere containing a silane, an oxidizing gas, NO, N.sub.2 O, CO.sub.2 or O.sub.2, in particular, and a neutral carrier gas such as nitrogen or argon. A controlled atmosphere containing the silane and the oxidizing gas is maintained in the immediate vicinity of the electrode, around the electrode (6) employed for the electrical discharge, while avoiding the process being perturbed by atmospheric air entrained, for example, by the substrate (2) as it travels (3).

Process for creating a deposit of silicon oxide on a traveling solid

A process for producing a silicon oxide deposit at the surface of a metallic substrate comprising the following steps performed either concomitantly or successively: (1) treating the surface of the substrate with a corona discharge; and (2) exposing the surface to an atmosphere containing a silicon compound in the gaseous state. Both steps (1) and (2) are conducted at a pressure greater than 10,000 Pa. This process can be used to provide anti-corrosion treatment to a metallic substrate or to a metallized polymeric support.

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Saint Cyr L'Ecole, France

Frank Slootman