Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Infineon Technologies Ag

Osram Opto Semiconductor Gmbh

Other

Infineon Technologies Austria Ag

Osram Gmbh

Osram Oledgmbh

Optun (bvi) Ltd.

Osram Otpo Semiconductors Gmbh

Frank Singer

Thomas Schwarz

Jürgen Moosburger

Matthias Sabathil

Hubert Halbritter

Ulrich Steegmüller

Norwin Von Malm

Peter Brick

Siegfried Herrmann

Roland Schulz

Markus Pindl

Matthias Sperl

Tilman Ruegheimer

Sandra Sobczyk

Stefan Illek

Jörg Erich Sorg

Stefan Groetsch

Martin Gruber

Martin Rudolf Behringer

Thorsten Scharf

Andreas Ploessl

Britta Göötz

Andreas Plößl

Michael Kühnelt

Roland Hüttinger

Thorsten Meyer

Herbert Brunner

Alexander F Pfeuffer

Stefan Grötsch

Alexander Linkov

Andreas Dobner

Alexander Martin

Laura Kreiner

Thomas Kippes

Jean-Jacques Drolet

Wolfgang Moench

Alfred Lell

Berthold Hahn

Georg Bogner

Karl Engl

Lutz Hoeppel

Thomas Bemmerl

Joachim Reill

Martin Haushalter

Roland Enzmann

Thomas Zeiler

Harald König

Juergen Moosburger

Florian Peskoller

Karsten Auen

Mathias Kämpf

Wolfgang Mönch

Bernd Boehm

Georg Rossbach

Jens Dieckröger

Korbinian Perzlmaier

Michael Zitzlsperger

Erwin Lang

Simon Jerebic

Lutz Höppel

Dietrich Bonart

Christian Leirer

Walter Wegleiter

Patrick Rode

Tansen Varghese

Moritz Engl

Ion Stoll

Andreas Grassmann

Marc Philippens

Tobias Meyer

Martin Strassburg

Peter Strobel

Britta Goeoetz

Andreas Biebersdorf

Petrus Sundgren

Oliver Hellmund

Andreas Weimar

Sebastian Wittmann

David Racz

Andreas Plössl

Peter Stauss

Wolfgang Gramann

Andreas Plöβl

Wolfgang Reill

Anna Kasprzak-Zablocka

Georg Dirscherl

Mikko Perälä

Michael Schumann

Guido Weiss

Jens Mueller

Frank Möllmer

Bruno Jentzsch

Mathias Kaempf

Markus Arzberger

Brendan Holland

Andreas Waldschik

Stefan Woetzel

Kerstin Neveling

Uwe Schindler

Ralph Bertram

A method of fabricating a semiconductor device package includes: providing a die carrier; disposing at least one semiconductor die on the die carrier, the semiconductor die comprising at least one contact pad on a main face remote from the carrier; electrically connecting the semiconductor die or another electrical device with an electrical connector; applying an encapsulant above the semiconductor die, the die carrier, and the electrical connector; and screwing a metallic drilling screw through the encapsulant so that an end of the drilling screw contacts the electrical connector.

Method for fabricating a semiconductor device package comprising a pin in the form of a drilling screw

A composite component, a device, and method for producing the composite component including a plurality of optical components, a removable sacrificial layer, a retaining structure and a common intermediate carrier are provided, wherein the optical components each have an optical element for shaping a light beam and the sacrificial layer is arranged in the vertical direction at least in places between the intermediate carrier and the optical components. The retaining structure includes retaining elements, wherein the retaining structure and the sacrificial layer form a mechanical connection between the intermediate carrier and the optical components. The optical components are mechanically connected to the intermediate carrier only via the retaining structure, wherein the retaining elements are formed in such a way that under mechanical load they release the optical components so that the optical components are formed to be detachable from the intermediate carrier and thus transferable.

Composite component made of optical components, method for producing a composite component and device comprising an optical component

A method of manufacturing a micro-light-emitting diode display includes processing a wafer to form a plurality of functional chips integral with the wafer. A plurality of wafer tiles is defined in the wafer, wherein each wafer tile is composed of a cluster of functional chips. The wafer tiles are singulated by wafer dicing. A plurality of separate wafer tiles is bonded to a semiconductor wafer by hybrid bonding. The functional chips are singulated together with chips of the semiconductor wafer by dicing the bonded-together wafer tiles and semiconductor wafer.

Method of manufacturing a hybrid device

A method of forming a semiconductor package includes providing a first metal substrate; and mounting a stacked arrangement on the first metal substrate, the stacked arrangement comprising a semiconductor die, wherein mounting the stacked arrangement includes: providing a first layer of attachment material between the first metal substrate and the stacked arrangement; and providing a second layer of attachment material within the stacked arrangement at an interface with the semiconductor die, wherein at least one of the first and second layers of attachment material is a compressible layer that includes one or more elastomeric elements embedded within a matrix of solder material.

Semiconductor device arrangement with compressible adhesive

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

The invention relates to an illumination arrangement comprising a light-emitting optoelectronic element and an optical device for beam conversion of electromagnetic radiation generated by the light-emitting optoelectronic element. The light emitting optoelectronic element comprises a plurality of emission areas arranged in matrix form; and each emission region is associated with a main beam direction. At least a portion of the emission areas is arranged such that the centers of the emission areas lie on a curved surface.

Lighting arrangement, light guide arrangement and method

An optical projection device and a method of producing the optical projection device are described. The optical projection device includes: a plurality of LEDs (light-emitting diodes), the LEDs each including a semiconductor mesa laterally spaced apart from one another by a grid structure. Each of the semiconductor mesas includes an n-type material and a p-type material adjoining at least partly the n-type material. The grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas. The grid structure includes a conductive material that electrically interconnects the n-type material of the semiconductor mesas. The grid structure is configured to block optical crosstalk between light emitted by the LEDs.

Optical projection device having a grid structure

A package includes a carrier, an electronic component on the carrier, an encapsulant encapsulating at least part of the carrier and the electronic component, and at least one lead extending beyond the encapsulant and having a punched surface, wherein at least part of at least one side flank of the encapsulant has a sawn texture.

Leadframe, encapsulated package with punched lead and sawn side flanks, and corresponding manufacturing method

An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

Optoelectronic light emitting device and manufacturing method

In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

Method for producing semiconductor lasers and semiconductor lasers

A multi-pixel display device with an integrated circuit, a plurality of light-emitting semiconductor chips disposed on the integrated circuit, a display area having a plurality of pixels, each of the light-emitting semiconductor chips being associated with one of the pixels, a light-directing element disposed between the plurality of light-emitting semiconductor chips and the display area and adapted to direct the light of each light-emitting semiconductor chip from the plurality of light-emitting semiconductor chips to its associated pixel.

Multi-pixel display device with light-guiding structures and light-emitting semicondutor chips disposed on interated circuit

The semiconductor device package comprises a die carrier, at least one semiconductor die disposed on the carrier, the semiconductor die comprising at least one contact pad on a main face remote from the carrier, an encapsulant disposed above the semiconductor die, an electrical connector electrically connected with the contact pad, a drilling screw screwed through the encapsulant and connected with the electrical connector.

Semiconductor device package comprising a pin in the form of a drilling screw

An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

Optically effective element, method of producing an optically effective element, and optoelectronic component

The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Semiconductor laser and method of production for optoelectronic semiconductor parts

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Regenstauf, Germany

Frank Singer