American Telephone & Telegraph Co., At&t Bell Laboratories

Frank Schrey

Edwin Arthur Chandross

Roland A Levy

Gerald Smolinsky

Robert E Dean

Patrick K Gallagher

Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.

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Neshanic Station, NJ, United States of America

Frank Schrey