Siemens Aktiengesellschaft

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Kernforschungszentrum Karlsruhe Gmbh

Frank S Becker

Wolfgang Ehrfeld

Norbert Benesch

Erwin W Becker

Helmuth Treichel

Dieter Pawlik

Stefan Krebs

Michael Krausa

Erwin Hopf

Klaus Schorb

A method for operating a line-side fundamental-frequency-clocked converter is disclosed. The converters has a bridge circuit with, for example three, upper and, for example three, lower semiconductor switches, which are connected to respective positive and negative terminals of a DC link circuit. Center taps of connected pairs of the upper and lower semiconductor switches are connected to the line voltage phases. Two upper or two lower semiconductor switches are simultaneously activated during fundamental frequency operation for a predetermined time period before or after a natural trigger instant of the semiconductor switches caused by a line voltage angle. An estimated line voltage angle for clocking the semiconductor switches is tracked based on two phase currents measured while the two upper or two lower semiconductor switches are simultaneously active.

Method for operating a converter and corresponding apparatus

A method and device for the detection of substances such as nitrotoluene, trinitrotoluene, dinitrotoluene, or derivatives, wherein a working electrode and an opposing electrode are contacted with the substance via a viscous electrolyte layer and a voltage is applied to the working electrode whose value is increased and decreased at least once with substantially equal beginning and end values within a predetermined time period, wherein the current strength is determined during this at least one measurement cycle in dependence on the applied voltage, is distinguished in that a plurality of measurement cycles are scanned, and differences of current values of sequential measurement cycles are determined and, in the event of the occurrence of a cathode current maximum, the associated voltage value is determined, held constant and the current strength extracted.

Method and device for the detection of not easily volatized substances

A method for the manufacture of silicon layers containing boron and phosphorus dopants wherein the silicon wafers are positioned in a reaction chamber into which there is introduced, from separate sources, (a) tetraethylorthosilicate as a source of silicon dioxide, (b) trimethylborate as a source of boron, and (c) a phosphorus source. The three reactants are decomposed in the reaction chamber to deposit silicon dioxide doped with boron and phosphorus onto the wafers, the decomposition being carried out at a temperature of at least 600.degree. C. and at a substantially subatmospheric pressure.

Method for the manufacture of silicon oxide layers doped with boron and

A process for producing a predetermined doping level in side walls and bases of trenches which have been etched into semiconductor substrates which involves treating the substrate with a gaseous atmosphere containing organic compounds of silicon, oxygen and boron in amounts sufficient to form a boron silicate glass, thermally decomposing the organic compounds to form the boron silicate glass as a layer deposit along the side walls and the bases and thereafter diffusing the layer deposit into the side walls and the base. This is followed by removing the layer deposit remaining after the predetermined amount of diffusion has taken place.

Process for producing a predetermined doping in side walls and bases of

A method of producing a defined arsenic doping in silicon semiconductor substrates is provided. Preferably, the arsenic doping is produced in the sidewalls and floors of trenches having high aspect ratio which are etched into the substrates. An arseno-silicate glass layer is deposited into these trenches to be used as a diffusion source, the glass layer being removed after the diffusion. The arseno-silicate glass layer is deposited by thermal decomposition from the vapor phase of tetraethylortho silicate Si)OC.sub.2 H.sub.5).sub.4 and triethylarsenate AsO(OC.sub.2 H.sub.5).sub.3. A steep and reproducible doping profile having constant, maximum penetration depth and high arsenic concentration in the substrate surface which is needed for VLSI semiconductor circuits is obtained through the process of the present invention.

Method of producing a defined arsenic doping in silicon semiconductor

A method for producing a multichannel plate containing metal dynodes and having a plurality of generally parallel channels for use in structures for amplifying or converting optical images or other two-dimensional signal patterns by secondary electron multiplication, which method includes:

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Munich, Germany

Frank S Becker