Northern Telecom Limited

Nortel Networks Corporation

Frank Reginald Shepherd

William D Westwood

Ian Vaughan Mitchell

Grantley Oliver Este

Todd William Simpson

Guo P Li

Agnes Margittai

Trevor Jones

Joannie Marks

A method of cleaving a semiconductor wafer comprising a deep ion implantation induced selective area of exfoliation. The method includes steps of selectively masking the material with a mask having edges parallel to natural cleavage planes of the semiconductor material, implanting unmasked regions of the material with light ions of hydrogen or helium, and annealing to cause exfoliation of the material from the implanted regions. As a result of exfoliation, the patterned structure remaining on the wafer and pieces of the exfoliated material have high quality sidewall-facets which provides cleaved facets along the cleavage planes of the material. A method of manufacturing optoelectronic devices and semiconductor laser devices is provided.

Method of cleaving a semiconductor wafer including implanting and annealing resulting in exfoliation

A method of patterning a brittle material, and particularly a semiconductor material, is provided comprising ion implantation induced selective area exfoliation. The method includes steps of masking the material, implanting unmasked regions of the material, with light ions of Hydrogen or Helium, and rapid thermal annealing at the temperature causing exfoliation of the material from the implanted regions. As a result, the material is patterned to a depth determined by the depth of ion implantation. The method allows patterning through crystalline or non-crystalline materials, or several layers of different materials at the same time. When the mask has straight sharp edges aligned parallel to natural cleavage planes of the semiconductor material, the exfoliation results in formation of high quality sidewall-facets of exfoliated material and of the remaining patterned material at the boundaries of exfoliated regions.

Method of patterning semiconductor materials and other brittle materials

A thin film resistor for optoelectronic integrated circuits is described. A stable low resistance, thin film resistor comprising a bilayer of platinum on titanium is provided. Advantageously, the resistive layer is protected by a layer of dielectric, e.g. silicon dioxide or silicon nitride to reduce degradation from humidity an under high temperature operation at 300.degree. C. or more. The resistor may be formed on various substrates, including silicon dioxide, silicon nitride and semiconductor substrates. Applications for optoelectronic integrated circuits include integrated resistive heaters for wavelength fine tuning of a semiconductor laser array.

Thin film resistor for optoelectronic integrated circuits

A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and DC stability is much improved.

Thin film transistors

A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and D.C. stability is much improved.

Growing community of inventors

Kanata, Canada

Frank Reginald Shepherd