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Zedna Ab

Aerocrine Ab

Senseair Ab

Circassia Ab

Fischer, Andreas

Niklaus, Frank

Frank Niklaus

Göran Stemme

Andreas Fischer

Valentin Dubois

Edvard Kälvesten

Niclas Roxhed

Kristinn B Gylfason

Henrik Gradin

Niklas Roxhed

Arne Quellmalz

Xiaojing Wang

Stefan Braun

A method for transferring an atomically thin layer comprising providing a target substrate and a donor substrate on which a first atomically thin layer has been formed. The method further comprises disposing an adhesion layer at the donor substrate or at the target substrate. The method further comprises bringing the target substrate and the donor substrate together. Further, the method comprises bonding together the donor substrate, the adhesion layer and the target substrate and removing the donor substrate.

Method of material transfer

Disclosed is a method of making a crack structure on a substrate, the crack structure being usable as a tunnelling junction structure in a nanogap device, including the controlled fracture or release of a patterned layer under built-in stress, thereby forming elements separated by nanogaps or crack-junctions. The width of the crack-defined nanogap is controlled by locally release-etching the film at a notched bridge patterned in the film. The built-in stress contributes to forming the crack and defining of the width of the crack-defined nanogap. Further, by design of the length of the bridge in a range between sub-&#x3bc;&#x3c0;&#x3b9; to &#x3e;25&#x3bc;&#x3b1;&#x3b9;, the separation between the elements, defined by the width of the crack-defined nanogaps, can be controlled for each individual crack structure from &#x3c;2 nm to &#x3e;100 nm. The nanogaps can be used for tunneling devices in combination with nanopores for DNA, RNA or peptides sequencing.

Crack structure and tunneling device with a layer exhibiting a crack-defined gap between two cantilevering parts

Disclosed is a method of making a crack structure on a substrate, the crack structure being usable as a tunneling junction structure in a nanogap device, including the controlled fracture or release of a patterned layer under built-in stress, thereby forming elements separated by nanogaps or crack-junctions. The width of the crack-defined nanogap is controlled by locally release-etching the film at a notched bridge patterned in the film. The built-in stress contributes to forming the crack and defining of the width of the crack-defined nanogap. Further, by design of the length of the bridge in a range between sub-&#x3bc;&#x3c0;&#x3b9; to &#x3e;25&#x3bc;&#x3b1;&#x3b9;, the separation between the elements, defined by the width of the crack-defined nanogaps, can be controlled for each individual crack structure from &#x3c;2 nm to &#x3e;100 nm. The nanogaps can be used for tunneling devices in combination with nanopores for DNA, RNA or peptides sequencing.

Crack structures, tunneling junctions using crack structures and methods of making same

A method is disclosed for forming conductive vias in a substrate by filling preformed via holes, preferably through via holes, with conductive material. The method includes providing a plurality of preformed objects at least partly including ferromagnetic material on a surface of the substrate; providing a magnetic source on an opposite side of the substrate with respect to the plurality of preformed objects, thereby at least partly aligning at least a portion of the preformed objects with a magnetic field associated with the magnetic source; and moving the magnetic source relative the substrate, or vice versa, thereby moving the at least portion of the preformed objects into at least a portion of the via holes.

Method and an apparatus for forming electrically conductive vias in a substrate, an automated robot-based manufacturing system, a component comprising a substrate with via holes, and an interposer device

The present invention relates to a method to attach a shape memory alloy wire to a substrate, where the wire is mechanically attached into a 3D structure on the substrate. The present invention also relates to a device comprising a shape memory alloy wire attached to a substrate, where the wire is mechanically attached into a 3D structure on the substrate.

Method for the wafer-level integration of shape memory alloy wires

A method for at least partially inserting a plug into a hole, said method comprising the steps of a) providing a at least one substrate with at least one hole wherein said at least one hole has a largest dimension of from 1 &#x3bc;m to 300 &#x3bc;m, b) providing a piece of material, wherein said piece of material has a larger dimension than said at least one hole, c) pressing said piece of material against the hole with a tool so that a plug is formed, wherein at least a part of said piece of material is pressed into said hole, d) removing the tool from the piece of material. There is further disclosed a plugged hole manufactured with the method. One advantage of an embodiment is that an industrially available wire bonding technology can be used to seal various cavities. The existing wire bonding technology makes the plugging fast and cheap.

Method for plugging a hole

A method of combining components to form an integrated device, wherein the components are provided on a first sacrificial wafer, and a second non-sacrificial wafer, respectively. The sacrificial wafer carries a first plurality of components and the non-sacrificial wafer carries a second plurality of components. The wafers are bonded together with an intermediate bonding material. Optionally the sacrificial wafer is thinned to a desired level. The components of the sacrificial wafer are electrically interconnected to the component(s) on the non-sacrificial wafer. Finally, optionally the intermediate bonding material is stripped away.

Method of joining components

A method of combining components to form an integrated device, wherein at least one first component is provided on a first surface of a sacrificial substrate, and at least one second component is provided on a first surface of a non-sacrificial substrate. At least one support structure is formed on at least one of the first surfaces of the sacrificial substrate, and the non-sacrificial substrate, respectively, such that said at least one support structure is extended outwardly from at least one of the first surfaces. The sacrificial substrate carrying the first component, and the non-sacrificial substrate carrying the second component, respectively, are bonded, so that the first and second surfaces will be facing one another with a distance defined by a thickness of the support structure. At least a part of the sacrificial substrate is removed. The first component and second components are interconnected.

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Täby, Sweden

Frank Niklaus