Siltronic Ag

Frank Muemmler

Peter Storck

Ludwig Altmannshofer

Georg Raming

Sarad Bahadur Thapa

Kurt Niederer

Helmut Schwenk

Simon Zitzelsberger

Gundars Ratnieks

Goetz Meisterernst

Guenter Sachs

Rudolf Mayrhuber

Helmut Teroerde

Ute Rothammer

Josef Berger

Peter Dreier

Martin Moeller

A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant adetermined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a&#x3e;a, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from &#x2212;50 &#x3bc;m to 50 &#x3bc;m.

Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing it

A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.

Method of supporting a growing single crystal during crystallization of the single crystal according to the FZ method

A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.

Method for growing a single crystal by crystallizing the single crystal from a float zone

Growing community of inventors

Emmerting, Germany

Frank Muemmler