Evonik Degussa Gmbh

Forschungszentrum Karlsruhe Gmbh

Frank-Martin Petrat

Hartmut Wiggers

Markus Pridoehl

Michael Kraemer

Paul Roth

Franz-Erich Baumann

Harald Haeger

Andreas Martin

Michael Holzapfel

Angela Koeckritz

Petr Novak

Guido Walther

Hilmi Buqa

Volker Hennige

Martin Roos

Heiko Thiem

Roland Schmechel

Peter Hannen

Jens Deutsch

Burkhard Reeken

Evelyn Albrecht

Matthias Ullrich

Sven Hill

Koshi Okamura

David Lee

Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200&#xb0; C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200&#xb0; C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite

The invention relates to a process for producing coated carbon particles, which comprises coating electrically conductive carbon particles with elemental doped or undoped silicon by chemical vapor deposition from at least one gaseous silane in an oxygen-free gas atmosphere in a reaction space, with the electrically conductive carbon particles being in continual motion during the vapor deposition, and also correspondingly coated carbon particles and their use in anode materials for lithium ion batteries.

Method for producing coated carbon particles and use of the latter in anode materials for lithium-ion batteries

The invention provides a method to produce primary diamines by catalytic conversion of diols having a linear main chain of from 4 to 31 carbon atoms into the corresponding diamines. The reaction is conducted in a liquid or supercritical phase and is catalyzed by a homogeneous ruthenium-containing complex. The primary diamines obtained may be suitable for polyamide syntheses.

Preparation of primary diamines having a linear main chain for polyamide syntheses

The invention provides a process for preparing linear alpha,omega-dicarboxylic diesters by reacting a triglyceride containing fatty acid residues having monounsaturated or polyunsaturated carbon chains with carbon monoxide, an acid and an OH-group donor in one reaction step in the presence of a catalyst.

Process for preparing linear alpha,omega-dicarboxylic diesters

The invention relates to an electrode material for a lithium ion battery which is distinguished by the fact that the electrode material comprises

Nanoscalar silicon particles in negative electrode materials for use in lithium-ion batteries

An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.

Nanoscale crystalline silicon powder

An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m/g is provided. The aggregated crystalline silicon may be doped with a doping component and can be used to produce electronic components.

Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt. %, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.

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Muenster, Germany

Frank-Martin Petrat