Motorola Corporation

Frank M Richie

Arumugam Satyanarayan

Bonnie A Swanson

A liquid phase epitaxial (LPE) melt is formed to be oversaturated with gallium arsenide, and to have a first temperature. A surface of a gallium arsenide substrate is converted to a first P-type layer (12). Subsequently, the first P-type layer (12) and the substrate (11) are covered with the LPE melt. A N-type layer (13) is formed on the first P-type layer (12) by reducing the first temperature of the LPE melt to a second temperature. A second P-type layer (14) is formed on the N-type layer (13) by reducing the second temperature of the LPE melt to a third temperature.

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Scottsdale, AZ, United States of America

Frank M Richie