Freiberger Compound Materials Gmbh

Robert Boschgmbh

Freiberger Compund Materials Gmbh

Frank Lipski

Ferdinand Scholz

Frank Habel

Martin Klein

Stephan Schwaiger

Carolin Tolksdorf

Timm Hoehr

Thomas Wunderer

Ilona Argut

Rudolph Rosch

Ingo Martini

Ilona Schwaiger

Rudolph Rösch

There is provided a template comprising a substrate comprising sapphire and at least one III-N crystal layer, wherein III denotes at least one element of the main group III of the periodic table of the elements, selected from the group of Al, Ga and In, wherein in a region of the at least one III-N layer above the substrate comprises a mask material as an interlayer, wherein the III-N crystal layer of the template is defined by one or both of the following values (i)/(ii) of the deformation &#x3b5;: (i) at room temperature the &#x3b5;value lies in the range of &#x3c;0; and (ii) at growth temperature the &#x3b5;value lies in the range of &#x3b5;&#x2264;0.

Method for producing III-N templates and the reprocessing thereof and III-N template

The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

A field plate trench FET includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate, both the gate and the field plate being disposed within a trench in the substrate and being surrounded by an insulator. A p-doped domain is disposed within the substrate below the trench. Also described is a semiconductor component having a substrate and a plurality of field plate trench FETs disposed within the substrate.

Field plate trench FET and a semiconductor component

A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (AlO) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.

Semipolar semiconductor crystal and method for manufacturing the same

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Reutlingen, Germany

Frank Lipski