Northrop Grumman Systems Corporation

Frank L Struemph

Edward Franklin Stephens, Iv

Jeremy Scott Junghans

Edward F Iv Stephens

A method of fabricating a high-density laser diode stack is disclosed. The laser diode bars each have an emitter surface and opposing surfaces on either side of the emitter surface. Each laser diode bar has metallization layers on the opposing surfaces and a solder layer on at least one of the metallization layers. The solder layer is applied to a semiconductor wafer prior to cleaving the wafer to create the laser diode bars. The laser diode bars are arranged in a stack such that the emitter surfaces of the bars are facing the same direction. The stack of laser diode bars is placed in a vacuum chamber. An anti-reflection coating is deposited on the emitter surfaces of the laser diode bars in the chamber. The laser diode bars are joined by applying a temperature sufficient to reflow the solder layers in the chamber.

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Wentzville, MO, United States of America

Frank L Struemph