Osram Opto Semiconductors Gmbh

Osram Gmbh

Frank Kühn

Volker Härle

Ulrich Zehnder

Dominik Eisert

Uwe Strauss

Johannes Baur

Norbert Linder

Michael Fehrer

Ernst Nirschl

Manfred Mundbrod-Vangerow

Reinhard Sedlmeier

Jacob Ulrich

Claudia G&ouml;ltl

A radiation-emitting semiconductor chip, having a multilayer structure () containing a radiation-emitting active layer (), and having a window layer (), which is transmissive to a radiation emitted by the active layer () and is arranged downstream of the multilayer structure () in the direction of a main radiating direction of the semiconductor component. The window layer () has at least one peripheral side area (), which, in the course from a first main area () facing the multilayer structure () in the direction toward a second main area () remote from the multilayer structure (), firstly has a first side area region () which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (). A peripheral side area () of the multilayer structure () and at least a part of the beveled, curved or stepped first side area region () are coated with a continuous electrically insulating layer (). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.

Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component

This invention describes a radiation-emitting semiconductor component with the a multilayered structure () that contains a radiation-emitting active layer (), and a window () transparent to radiation that has a first principal face () and a second principal face () opposite the first principal face (), and whose first principal face () adjoins the multilayered structure (). At least one recess () is made in the window (), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window () or of the recess () is provided at least partially with a contact surface (). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings ().

Semiconductor component which emits radiation, and method for producing the same

A semiconductor chip has a substrate that is in the form of a parallelepiped whose side surfaces are shaped as tilted parallelograms. Such a semiconductor chip has a high output efficiency and a homogeneous thermal load due to having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.

Method for producing a radiation-emitting semiconductor chip

Radiation-emitting semiconductor chip, and method for producing the semiconductor chip

In order to subdivide a wafer ( ) into chips, recesses ( ) are introduced from a rear side ( ), said recesses weakening the wafer ( ) at the breaking points. As a result, it is possible to produce chips whose length dimensions are less than twice the thickness of the chips.

Method for subdividing wafers into chips

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Munich, Germany

Frank Kühn