Osram Opto Semiconductors Gmbh

Osram Gmbh

Frank Kuehn

Uwe Strauss

Dominik Eisert

Ulrich Zehnder

Volker Haerle

Manfred Mundbrod-Vangerow

Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure () comprising a radiation-emitting active layer (), with electrical contacts () for impressing a current in the multilayer structure () and with a radiotransparent window layer (). The window layer is arranged exclusively on the side of the multilayer structure () facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion () which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion () that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer () encompassing the second side wall portion () forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.

Radiation emitting semiconductor device

A radiation-emitting semiconductor device with a multilayer structure comprising a radiation-emitting active layer, with electrical contacts for impressing a current in the multilayer structure and with a radiotransparent window layer. The window layer is arranged exclusively on the side of the multilayer structure facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer encompassing the second side wall portion forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.

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Munich, Germany

Frank Kuehn