W.c. Heraeus Gmbh

Heraeus Deutschland Gmbh & Co Kg

Heraeus Precious Metals Gmbh & Co. Kg

W.c. Heraeus Gmbh & Co Kg

Medtronic, Inc.

Osram Opto Semiconductors Gmbh

Heraeus Materials Technology North America LLC

W.c. Heraeus Gmbh & Co.

Frank Krüger

Heiko Specht

Oliver Keitel

Matthias Frericks

Christiane Leitold

Eckhard Ditzel

Hans-Jurgen Wachter

Hans-Jürgen Wachter

Ronald Eisele

Joachim Hossick-Schott

Ulrich Hausch

Andreas Reisinger

Michael Schumann

Wolfgang Schmitt

Michael Schäfer

Robert Dittmer

Albrecht Bischoff

Bernd Kunkel

Bernd Gehlert

Andreas Hinrich

Andreas Steffen Klein

Martin Becker

Hans Jürgen Wachter

Martin Bleifuss

Anton-Zoran Miric

Holger Ulrich

Xiaoyun Wang

Doug Shearer

Christian Bachmann

Michael Pönitz

David Benning

Heinz Förderer

Frank Schefuss

Lutz Schräpler

Lars Paulsen

Frank Osterwald

Jacek Rudzki

Elisa Wieseler

A semiconductor module () contains a ceramic interconnect device () having at least one semiconductor component (). The at least one semiconductor component () is covered by an encapsulating compound () which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device () is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.

Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component

One aspect relates to an electrical bushing for a medically implantable device, including an electrically insulating base body and an electrical conducting element. The conducting element includes a cermet, and the base body and the conducting element are connected by a sintered bond with a hermetic seal against the base body. The conducting element extends from a first surface of the base body through the base body to a second surface of the base body. The conducting element has first and second electrically conductive areas, and at least one of the electrically conductive areas is at least partially superimposed by a layer-like contact element, including a metal, so that the conducting element is connected in an electroconductive manner via the contact element. The contact element is an electrochemically created layer, such that it has a porous structure, wherein the porosity of the contact element is not more than 20%.

Electrical bushing with contact element and method for the production

A strip-type substrate includes a foil having a number of substrate units for producing chip card modules. The substrate has an inner face for at least partial direct or indirect contacting of a semiconductor chip and an outer face lying opposite the inner face. The foil includes of steel, in particular high-grade steel, and a first layer of nickel or a nickel alloy on at least some sections of the outer face.

Strip-type substrate for producing chip card modules

A laminate and method for producing the laminate are provided for contacting at least one electronic component. An insulating layer is laminated between first and second metal layers electrically contacted to each other in at least one contact region. At least one recess in the contact region is generated with at least one embossing and/or bulging in the first metal layer. The distance between the two metal layers is reduced, such that dimensions of the embossing/bulging are sufficient for taking up the electronic component, which is inserted and connected into the embossing/bulging in a conductive manner therein. The electronic component is taken up in the embossing/bulging entirely with respect to its circumference and at least partly with respect to the height (H) of the electronic component. The laminate may be used as a circuit board, sensor, LED lamp, mobile phone component, control, or regulator.

Chip-integrated through-plating of multi-layer substrates

A class of alloys is provided that form metallic glass upon cooling below the glass transition temperature Tg at a rate below 100&#xb0; K/sec. The alloys have a high value of temperature difference (DT) between the crystallization temperature (Tx) and the glass transition temperature (Tg) of the intermetallic alloy. Such alloys comprise zirconium in the range of 70 to 80 weight percent, beryllium in the range of 0.8 to 5 weight percent, copper in the range of 1 to 15 weight percent, nickel in the range of 1 to 15 weight percent, aluminum in the range of 1 to 5 weight percent and niobium in the range of 0.5 to 3 weight percent, or narrower ranges depending on other alloying elements and the critical cooling rate and value of DT desired. Furthermore, methods are provided for making such metallic glasses.

Zirconium-based alloy metallic glass and method for forming a zirconium-based alloy metallic glass

A method is provided for production of a medical marker () made of an X-ray-opaque material, including the following steps:

Method for production of a medical marker

One aspect relates to a stimulation electrode including an electrically conducting base body. The base body encompasses tantalum and is at least partially covered with a porous tantalum oxide layer, which is anodically applied by means of high voltage pulses. Provision is made according to an embodiment for a metallic protective layer to cover the porous tantalum oxide layer so as to prevent a hydrogen embrittlement.

Stimulation electrode

A stimulation electrode is produced having a porous film layer and being partially coated with an insulating parylene (polyparaxylylene) film, whose insulating film has a dielectric breakdown voltage of greater than 100 V. Parylene is deposited on the entire surface of a porous film coating and then partially removed again by plasma. After the partial removal of the parylene, this porous film still has a capacitance of greater than 15 mF/cmin a physiological NaCl solution at a frequency of 0.1 Hz. For the stimulation electrode, the transition from the insulating film to the porous film is formed so that the film thickness of the parylene film decreases continuously. In this way, a stimulation electrode having a porous film layer and being partially coated with an insulating parylene film is provided, whose electrode on the non-insulating parylene film-coated surface has a capacitance of greater than 15 mF/cmin a physiological NaCl solution at a frequency of 0.1 Hz and whose insulating film advantageously has a dielectric breakdown voltage of greater than 100 V.

Selective parylene coating for cardiac pacemaker electrodes

A stimulation electrode is provided having an electrically conducting electrode base member which is partially covered with an electrically insulating ceramic layer. The ceramic layer is formed of an oxide and/or an oxynitride of at least one metal of the group of titanium, niobium, tantalum, zirconium, aluminum and silicon. Various methods are provided for production of the stimulation electrode, including methods in which the ceramic layer is formed in situ by a thermal, chemical or electrochemical oxidation or oxynitridation process. The stimulation electrode may be used as a cardiac pacemaker electrode, a neuro-stimulation electrode, or another human implant.

Method for producing a stimulation electrode

A stimulation electrode is provided having an electrically conducting electrode base member which is partially covered with an electrically insulating ceramic layer. The ceramic layer is formed of an oxide and/or an oxynitride of at least one metal of the group of titanium, niobium. tantalum, zirconium, aluminum and silicon. Various methods are provided for production of the stimulation electrode, including methods in which the ceramic layer is formed in situ by a thermal, chemical or electrochemical oxidation or oxynitridation process. The stimulation electrode may be used as a cardiac pacemaker electrode, a neuro-stimulation electrode, or another human implant.

The present invention provides improved cathodes and industrialized methods for producing such cathodes using an industrial dosing valve-based electrode coating fluid emitting technique. The family of cathodes according to the present invention can be produced so that they inhabit a pre-existing metallic surface such as an inner surface of a titanium casing adjacent but insulated from direct electrical communication from an anode. Foil-type valve metal anodes as well as porous valve metal anodes formed from metallic powders may be used in conjunction with the cathodes of the present invention.

Methods and apparatus for producing carbon cathodes

An electrode structure made of noble metal or a noble metal alloy having a thickness of &#x2266;100 &#x3bc;m is provided for implants. The electrode structure has an electrode core made of gold, silver, copper, or an alloy of at least two of these elements, and the electrode core is completely encased by a first coating, which is formed from platinum, iridium, or ruthenium.

Electrode structure and methods for making and using same

A bonding or superfine wire is provided made of copper, with a gold enrichment on the surface thereof, in particular in an amount corresponding to a coating of at most 50 nm. The wire may be bonded by the ball/wedge method, has a copper-colored appearance, and the ball thereof after flame-off has a hardness of less than 95 according to HV0.002. In order to produce the bonding or superfine wire, a copper wire is coated with gold or a copper-gold alloy or gold is introduced into the surface of the copper wire. The wires are bonded to a semiconductor silicon chip.

Copper bonding or superfine wire with improved bonding and corrosion properties

An electrode for medical applications is provided with a PtIr coating which is at least partly porous. The coating contains more than 20% iridium by weight and at least 100 ppm Pt. The coated areas of the electrode exhibit an electrochemical capacitance of more than 5 mF/cmin physiological saline solution at 37&#xb0; C. and a measurement frequency of 100 mHz. A sputter process is suitable for this purpose, in which a porous platinum-iridium layer is deposited on the electrode by simultaneously sputtering at least one iridium target and at least one platinum target.

Stimulation electrode with porous coating

Stimulation electrode and methods of making and using same

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Nidderau, Germany

Frank Krüger