Fundacio Institut De Ciencies Fotoniques

Institucio Catalana De Recerca I Estudis Avancats

Consejo Superior De Investigaciones Cientificas

Asociacion-centro De Investigacion Cooperativa En Nanociencias-cic Nanogune

Fundació Institute De Ciències Fotòniques Parque Mediterraneo De La Tecnologia

Frank Koppens

Gerasimos Konstantatos

Stijn Goossens

Valerio Pruneri

Francisco Javier García De Abajo

Hitesh Agarwal

Juan José Piqueras

Klaas-Jan Tielrooij

Rainer Hillenbrand

Juan JoséPiqueras

Marta Autore

Dominik Kufer

Bernat Terrés

Fabio Gatti

Raúl Pérez

Ivan Nikitskiy

Davide Janner

Carles Monasterio

Gerasimos Konstanatos

The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (C) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (C) resulting in a total capacitance (C); —a voltage detector to detect an output voltage (V) stored in the total capacitance (C). The system further comprises means to apply a gate voltage (V) to the gate electrode structure (G, BE) selected to: —make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and —tune the quantum capacitance (C). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

Charge sensing device with gate voltage selected to operate around the charge neutrality point and tune the quantum capacitance

Provided is an electro-optical modulator, particularly a double layer graphene modulator having an optimized arrangement to provide both a large optical bandwidth and a high optical transmission for light travelling through an optical waveguide of the modulator, wherein at least one of a top and a bottom graphene sheets extends along a X-direction: Provided is also a method for obtaining the electro-optical modulator of the invention.

Electro-optical modulator and a method for obtaining an electro-optical modulator

The present invention relates to an electronic device, comprising: &#x2014;a GFET; &#x2014;noise suppression means comprising: &#x2014;a modulation unit applying to a gate (G) of the GFET a signal Vwith frequency fto modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency f, &#x2014;a control unit (CU), and&#x2014;a demodulation circuit which is CMOS-implemented and that: &#x2014;comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency f; or&#x2014;is configured to generate and apply a signal Vwith frequency fto a source (S) of the GFET continuously, simultaneously and with a delay tto induce a phase with respect to Vto yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Electronic device and a method for suppressing noise for an electronic device

The present invention relates to an optoelectronic apparatus, comprising: &#x2014;an optoelectronic device comprising: &#x2014;a transport structure (T) comprising a 2-dimensional layer; &#x2014;a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and&#x2014;drain (D) and source (S) electrodes electrically connected to the transport structure (T); &#x2014;a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval thas passed, and during a tthat is at least 10 times shorter than t, wherein tis longer than a predetermined trapping time &#x3c4;. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Optoelectronic apparatus, a reading-out method, and a uses of the optoelectronic apparatus

An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (), a dielectric layer (), a transport layer, and a photosensitizing layer (). The transport layer comprises at least a 2-dimensional semiconductor layer (), such as MoS, and the photosensitizing layer () comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

Optoelectronic apparatus with a photoconductive gain

The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising: &#x2014;an antenna having one or more antenna branches (A; A, A) and adapted to operate in the THz and/or IR and/or MW frequency range; and &#x2014;a structure made of at least one photoactive material defining a photo-active area (Ga) arranged to absorb light radiation impinging thereon. The focus area of the at least one antenna branch (A; A, A) is dimensionally equal or smaller than the photo-active area (Ga).

Device for operating with THz and/or IR and/or MW radiation

The present invention relates to an optoelectronic apparatus comprising: &#x2014;an optoelectronic device comprising: &#x2014;a transport structure (T) comprising a 2-dimensional layer; &#x2014;a photosensitizing structure (P) configured and arranged to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and &#x2014;drain (D) and source (S) electrodes electrically connected to respective separate locations of the transport structure (T); &#x2014;noise suppression means comprising a modulation unit including: &#x2014;a control unit to generate and apply on the drain (D) or source (S) electrodes a voltage oscillating signal having a component with a frequency of &#x3c9;/2&#x3c0;; and &#x2014;a signal extraction unit to extract a required electric signal, from an output signal, with no components below &#x3c9;/2&#x3c0;. The present invention also concerns to a method for suppressing noise for an optoelectronic apparatus according to the invention, and to the use of the apparatus as a light detector or as an image sensor.

Optoelectronic apparatus, a method for suppressing noise for an optoelectronic apparatus, and uses thereof

Provided are gaze tracking apparatuses, which in some embodiments can include an optoelectronic device, wherein the optoelectronic device includes an image sensor with non-local readout circuit having a substrate and a plurality of pixels and operatively connected to a control unit, wherein a first area of the substrate is at least partially transparent to visible light and at least the plurality of pixels of the image sensor are arranged on the first area of the substrate to aim to an eye of a user when placed in front of an inner face of the substrate, and wherein the control unit is also adapted to control the image sensor to acquire image information from the user's eye for performing a gaze tracking of the user's eye.

Gaze tracking apparatus

The invention relates to an image sensor comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit, characterized in that it comprises a monolithic three-dimensional integrated circuit comprising an upper level and a lower level; wherein each pixel comprises: a photosensitive element arranged in said upper level and comprising a photosensitizing layer associated to a transport layer; an active device arranged in said lower level and operatively coupled to the photosensitive element; and a first intermediate terminal and an output terminal circuitally connected, respectively, to the photosensitive element and to the readout circuit; wherein the image sensor further comprises a dark current suppressing circuit; and wherein the control unit is configured to, upon readout of a pixel, circuitally connect the first intermediate terminal of said pixel with its output terminal through the dark current suppressing circuit. The invention also relates to an optoelectronic system comprising said image sensor and to a method of manufacturing said image sensor.

Image sensor, optoelectronic system comprising said image sensor, and method for manufacturing said image sensor

Provided are image sensors with non-local readout circuits that include a substrate and a plurality of pixels and operatively connected to a control unit, wherein the control unit has first and second biasing circuits for providing, respectively, substantially symmetrical first and second biasing voltages and including, respectively, first and second selection means to selectively bias the pixels; and a readout circuit for reading out the pixels; and in that each pixel includes a photo-active element that has a photosensitizing layer associated to a transport layer; a non-photo-active reference element; first and second contacts circuitally connected, respectively, to the first and second biasing circuits; and an output contact circuitally connected to the readout circuit; wherein the photo-active element is circuitally connected between the first and output contacts, and the reference element is circuitally connected between the output and second contacts. Also provided are optoelectronic systems that include the image sensor.

Image sensor with non-local readout circuit and optoelectronic device comprising said image sensor

An electronic platform comprising a substrate made of a ABO3 crystal () and at least one layer of a two-dimensional conducting sheet of carbon atoms () of a thickness between one and four atoms, characterized in that the conducting layer(s) is (are) placed on top of a face of the crystal whose orthogonal axis is at an angle up to 35&#xb0; of the crystal's spontaneous polarization or c-axis. The invention achieves a sheet resistance lower than 1 &#x3a9;/square at temperatures higher than 77K.

[object Object]

An infrared photoconversion device comprising a collector with at least an active layer made of a single sheet of doped single-layer, bilayer, or multilayer graphene patterned as nanodisks or nanoribbons. The single sheet of doped graphene presents high absorbance and thus, the efficiency of devices such as photovoltaic cells, photodetectors, and light emission devices can be improved by using graphene as the central absorbing or emitting element. These devices become tunable because their peak absorption or emission wavelength is changed via electrostatic doping of the graphene.

Growing community of inventors

Castelldefels, Spain

Frank Koppens