Osram Opto Semiconductors Gmbh

Osram Gesellschaft MIT Beschrankter Haftung

Patent Treuhand Gesellschaft Fur Elektrische Gluhlampen Mbh

Osram Gmbh

Osram Gesellschaft MIT Beschraenkter Haftung

Patent-treuhand-gesellschaft Fuer Elektrische Gluehlampen Mbh

Osram Ag

Other

Osram Sylvania Inc.

Symyx Technologies, Inc.

Osram Oledgmbh

Ledvance Gmbh

Osram S.p.a. - Societa' Riunite Osram Edison Clerici

Frank Jermann

Tim Fiedler

Martin Zachau

Stefan Lange

Dirk Berben

Andries Ellens

Hailing Cui

Daniel Bichler

Franz Zwaschka

Wolfgang Rossner

Alexander Baumgartner

Herbert Brunner

Armin Konrad

Norwin Von Malm

Ralph Wirth

Reiner Windisch

Benjamin Krummacher

Bert Braune

Andreas Biebersdorf

Dominik Eisert

Martin Devenney

George C Wei

Daniel Mark Giaquinta

Krister Bergenek

Norbert Linder

Homer Antoniadis

Joerg Sorg

Axel Kaltenbacher

Madis Raukas

Markus Richter

Gertrud Kraeuter

Franz Kummer

Simone Capeleto

Barbara Huckenbeck

Vera Stöppelkamp

Michael Ostertag

Rebecca Römer

Frauke Thienel

Günter Huber

Daniel Becker

Norbert Bönisch

Bianca Pohl

Manfred Kobusch

Wolfram Hempel

Jörg Strauβ

Dieter Bokor

Ulrich Müller

Renate Hirrle

Frank Baumann

Raimund Oberschmid

Harald Jaeger

Earl Danielson

Florian Schindler

Sonja Tragl

Matteo Toscan

Guenter Huber

Norbert Boenisch

Torsten Fries

Christian Koch

Jörg Strauss

Joerg Frischeisen

Christine Maier

Steven Mackel

Rebecca RÖMER

Wolfang Rossner

Antoniadis Homer

Benjamin Claus Krummacher

A phosphor and a method for making the phosphor are disclosed. In an embodiment a phosphor for emission of red light includes Sr(SrCa)SiAlN:Eu, wherein x is 0.8&#x3c;x&#x2264;1, wherein between 0.1% and 5% inclusive of the Sr, Ca and/or Sr/Ca lattice sites are replaced by Eu, wherein the parameter value a is between 0.6 and 1.0 inclusive, wherein the phosphor has a structure comprising (Si/Al)Ntetrahedra arranged in a 3D network, in which layers in an a-c plane are linked in a b-direction, and wherein pure Sr positions and positions having a mixed Sr/Ca population are intercalated between the network, layer by layer.

Phosphor, method for producing a phosphor and use of a phosphor

A method for producing phosphor particles with at least one first protective layer and a phosphor particles having at least one protective layer are disclosed. In an embodiment, a method includes providing phosphor particles and applying at least one first protective layer to the surface of the phosphor particles, wherein the at least of first protective layer include depositing a first starting compound by a first atomic layer deposition on the surface of the phosphor particles and depositing a second starting compound by a second atomic layer deposition on the surface of the phosphor particles.

Method for producing luminescent particles with a protective layer and luminescent particles having a protective layer

A phosphor and a lighting device are disclosed. In an embodiment a lighting device includes a first phosphor disposed in a beam path of the primary radiation source, wherein the first phosphor has the formula Sr(SrM)SiAl(N,X):D,A,B,E,G,L, wherein element M is selected from Ca, Ba, Mg or combinations thereof, wherein element D is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals or Yb, wherein element A is selected from divalent metals different than those of the elements M and D, wherein element B is selected from trivalent metals, wherein element E is selected from monovalent metals, wherein element G is selected from tetravalent elements, wherein element L is selected from trivalent elements, wherein element X is selected from O or halogen, and wherein a parameter a is between 0.6 and 1.0.

An optoelectronic semiconductor component is disclosed. In an embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip for generating primary radiation in a near-ultraviolet or in a visible spectral range, at least one phosphor for partial or complete conversion of the primary radiation into a longer-waved secondary radiation which is in the visible spectral range and at least one filter substance for partial absorption of the secondary radiation, wherein the phosphor and the filter substance are closely connected to the semiconductor chip.

Optoelectronic semiconductor component

Conversion LED emits primary radiation (peak wavelength 435 nm to 455 nm) and has a luminescent substance-containing layer positioned to intercept the primary radiation and convert it into secondary radiation. First and second luminescent substances are used. The first luminescent substance is a ABO:Ce garnet type emitting yellow green having cation A=75 to 100 mol. % Lu, remainder Y and a Ce content of 1.5 to 2.9 mol. %, where B=10 to 40 mol. % Ga, remainder Al. The second luminescent substance is of the MAlSiN:Eu calsine type which emits orange red, where M is Ca alone or at least 80% Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, wherein some of the Al up to 20%, can be replaced by B, and wherein N can be partially replaced by O, F, Cl, alone or in combination.

Conversion LED with high color rendition index

A light source includes a primary radiation source, which emits radiation in the shortwave range of the optical spectral range, wherein this radiation is converted at least by means of a first luminescent substance entirely or partially into secondary longer-wave radiation in the visible spectral range, wherein the first luminescent substance originates from the class of nitridic modified orthosilicates (NOS), wherein the luminescent substance has as a component M predominantly the group EA=Sr, Ba, Ca, or Mg alone or in combination, wherein the activating dopant D is composed at least of Eu and replaces a proportion of M, and wherein a proportion of SiO2 is introduced in deficiency, so that a modified sub-stoichiometric orthosilicate is provided, wherein the orthosilicate is an orthosilicate stabilized with RE and N, where RE=rare earth metal.

Light source comprising a luminescent substance and associated illumination unit

A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element A1, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, A1 includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SrCa)SiAlN.

A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SrCa)SiAlN.

Lighting device comprising a primary radiation source and a first phosphor

Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Optoelectronic component with inert gas atmosphere

A luminophore from the class of nitridic or oxynitridic luminophores with at least one cation M and an activator D, wherein a proportion x of the cation is replaced with Cu and D is at least one element from the series Eu, Ce, Sm, Yb and Tb

Luminophore and light source containing such a luminophore

A conversion LED comprising a chip which emits primary radiation and a luminescent substance-containing layer which is on the chip or positioned so that it intercepts the primary radiation emitted from the chip and which converts at least some of the primary radiation of the chip into secondary radiation, wherein a first luminescent substance of the ABO:Ce garnet type which emits yellow green and a second luminescent substance of the MAlSiN:Eu calsine type which emits orange red is used, wherein the peak wavelength of the primary radiation lies in the 435 to 455 nm range, the first luminescent substance being a garnet having essentially the cation A=75 to 100% Lu, remainder Y and a Ce content of 1.5 to 2.9%, where B=10 to 40% Ga, remainder Al, while the second luminescent substance is of the basic MAlSiN:Eu type where M is Ca alone or at least 80%, in particular at least 90%, preferably at least 95% Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, wherein some of the Al up to 20%, preferably at most 5%, can be replaced by B, and wherein N can be partially replaced by O, F, Cl, alone or in combination.

An illumination from the class of oxynitridosilicates, doped with bivalent europium and comprising a cation M2+, said illuminant corresponding to the basic formula MSi0N:Dwherein the following holds good: M=SrBamit 0.3&#x3c;x&#x3c;0.7.

Illuminant and light source containing the same, and method for producing said illuminant

A light system based on at least two chips, in particular LEDs containing chips may include at least one first chip capable of emitting a primary radiation, a layer containing a phosphor mounted in front of the first chip, for converting the primary radiation of the first chip into secondary radiation, at least one second chip capable of emitting a second primary radiation with a greater wavelength than the primary radiation, wherein the layer is arranged spaced apart from the first chip, wherein the second chip is arranged in such a way that its radiation is substantially not absorbed by the phosphor.

Light system with increased efficiency

An optoelectronic component comprises an organic layer sequence (), which emits an electromagnetic radiation () having a first wavelength spectrum during operation, and also a dielectric layer sequence () and a wavelength conversion region () in the beam path of the electromagnetic radiation () emitted by the organic layer sequence (). The wavelength conversion region () is configured to convert at least partially electromagnetic radiation having the first wavelength spectrum into an electromagnetic radiation () having a second wavelength spectrum. The dielectric layer sequence () is arranged in the beam path of the electromagnetic radiation () emitted by the organic layer sequence between the organic layer sequence () and the wavelength conversion region () and is at least partially opaque to an electromagnetic radiation having a third wavelength spectrum, which corresponds to at least one part of the second wavelength spectrum.

Optoelectronic component

Growing community of inventors

Königsbrunn, Germany

Frank Jermann