Xerox Corporation

Frank Jansen

Joseph Mort

Steven J Grammatica

Michael A Morgan

Koji Okumura

Mary A Machonkin

Daniel E Kuhman

Santokh Singh Badesha

John Christopher Knights

Inan Chen

A method of forming a patterned, poly-crystalline diamond film on a substrate is disclosed. First, a photoresist layer is applied to a substrate. A diamond powder layer is formed on the photoresist layer either through spray-coating, dip-coating, spin-coating using a diamond-powder suspension, and the like. The photoresist layer is exposed to electromagnetic radiation through a mask either before or after the diamond powder layer is applied. Then, the photoresist layer is developed, after which the substrate is heated causing the photoresist layer to carbonize. The substrate is exposed to a mixture of hydrogen-containing and carbon-containing gases which are decomposed in a processing apparatus. Hydrogen in this gas mixture etches away at the carbonized photoresist layer leaving behind the patterned diamond powder layer. Carbon in these carbon-containing gases combines with the diamond particles in the diamond powder layer to form diamond structures on the substrate.

Method for the direct patterning of diamond films

A thin film transistor in which a source electrode is electrically isolated from a drain electrode and a gate electrode. The gate electrode is formed on one surface of an electrically insulating layer. A semiconducting layer is formed on the other surface of the electrically insulating layer. The semiconducting layer has a charge carrier mobility of at least 1 cm.sup.2 /V-sec. and is made from a polycrystalline diamond layer. The source electrode and the drain electrode are formed on one surface of the polycrystalline diamond layer. The other surface of the polycrystalline diamond layer is in integral contact with the other surface of the electrically insulating layer.

Thin film transistor

A process for minimizing or avoiding drop deflection in ink jet devices which involves coating the ink jet head components with amorphous carbon and subsequently subjecting the amorphous carbon to fluorination in which results in a fluorine surface layer present on the amorphous carbon coating to prevent ink drop deflection.

Coating processes for an ink jet printhead

A method and apparatus for developing an image wherein a distance between a charge receiving surface and a conductive surface is varied. During charging of the charge receiving surface, the receptor thickness is smaller than during the development step.

Variable-thickness imaging members

An apparatus for preparing plasma deposited films comprised of a first electrode means; a second counterelectrode means; a receptable means for the first electrode means, and the second counterelectrode means; a substrate means to be coated contained on the first electrode means, which electrode means has contained therein permanent magnets; a gas inlet means; and a gas exhaust means, wherein a silane gas is introduced into the receptacle in a crossflow direction perpendicular to the axis of the cylindrical member.

Apparatus for amorphous silicon film

A process for the preparation of continuous polycrystalline diamond films which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to about 10 particles per square micron with an average particle diameter of from about 0.1 to about 0.4 micron; heating the resulting powdered substrate subsequent to incorporation in a processing apparatus; introducing a mixture of gases into the chamber, which gases provide a supply of carbon and hydrogen; and decomposing the gas mixture.

Processes for the preparation of polycrystalline diamond films

An electroreceptor comprised of a supporting substrate and hydrogenated amorphous silicon carbide with from about 10 to about 60 atomic percent of carbon, from about 10 to about 60 atomic percent of hydrogen, and from about 10 to about 80 atomic percent of silicon.

Amorphous silicon carbide electroreceptors

Disclosed is an electrographic imaging member comprised of a supporting substrate; and in contact therewith components comprised of regions of a photogenerating substance dispersed in a charge transporting material comprised of plasma deposited silicon oxide with at least 50 atomic percent of oxygen.

Imaging members with plasma deposited silicon oxides

A negatively charged photoconductive imaging member comprised of a supporting substrate; an electron polysilylene transporting layer; a metal oxide layer; and thereover a photogenerating layer comprised of hydrogenated amorphous silicon.

Photoconductive imaging members with electron transporting polysilylenes

An electrostatographic imaging member comprised of a supporting substrate; a hydrogenated amorphous silicon photogenerator layer; and in contact therewith a plasma deposited charge transporting layer with components therein selected from the group consisting of silicon nitrides, boron nitrides, aluminum nitrides, phosphorous nitrides, gallium nitrides, boron phosphides, aluminum phosphides, boron oxides, aluminum oxides, gallium oxides, and organosilanes; and wherein the transporting layer contains therein hydrogen, halides, or mixtures thereof.

Layered amorphous silicon imaging members

An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, nitrogen, or arsenic. Also disclosed is a photoresponsive electrophotographic device comprised of a supporting substrate, an uncompensated amorphous silicon layer and an amorphous silicon composition containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer or wherein the photoresponsive device is comprised of a supporting substrate, an uncompensated amorphous silicon composition, a compensated amorphous silicon composition, containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer and a top overcoating layer of silicon nitride, silicon carbide, or amorphous carbon.

Electrophotographic devices containing compensated amorphous silicon

Disclosed is a photoresponsive imaging member comprised of amorphous carbon.

Electrophotographic imaging members with amorphous carbon

Disclosed is an electrographic imaging member consisting essentially of a supporting substrate, a hydrogenated amorphous silicon photogenerating layer, and in contact therewith a charge transporting layer of plasma deposited silicon oxide containing at least 50 atomic percent of oxygen.

Heterogeneous electrophotographic imaging members of amorphous silicon

Disclosed is an apparatus for affecting the preparation of thin film transistor arrays comprised of a chamber means with a gas inlet means, and a gas exhaust means, first rotatable polygon electrode means, second stationary counterelectrode means of cylindrical shape situated coaxially with the first electrode means, and substrate means to be coated present on the first polygon electrode means.

Apparatus and process for the fabrication of large area thin film

Disclosed is an electrophotographic photoresponsive device comprised of a supporting substrate, an amorphous silicon charge transport layer, a trapping layer comprised of doped amorphous silicon, and a top insulating overcoating layer.

Growing community of inventors

Webster, NY, United States of America

Frank Jansen