International Business Machines Corporation

Frank J Schmidt, Jr

David Lee Rath

Kenneth John McCullough

Anthony Gene Domenicucci

Kenneth John Giewont

Rangarajan Jagannathan

Gerd Pfeiffer

Richard J Murphy

Neena Garg

Donald J Delehanty

George F Ouimet, Jr

Bryan N Rhoads

Donna Diane Miura

Thomas J Vanduynhoven

Terrance M Tornatore

Gregory D Pomarico

Roland F Drew

A method of improving surface morphology of a semiconductor substrate when using an SOI technique comprises providing a silicon ingot positioned on a support member, orientating the silicon ingot in relation to the support member, and a cutting device, and cutting the silicon ingot along about a (100) crystal plane of the silicon ingot, preferably using a wire saw. This then provides a silicon substrate having an initial surface defining a miscut angle which is less than about 0.15 degrees from the (100) crystal plane. The method then comprises processing the silicon substrate using SIMOX processing, which includes implanting oxygen atoms in the silicon substrate to form a buried oxide layer and annealing the silicon substrate to provide a final substrate surface. Finally, the method includes accepting the final substrate surface for further processing when the final substrate surface measures between 2-20 &angst; RMS using an atomic force microscopy technique.

Surface roughness improvement of SIMOX substrates by controlling orientation of angle of starting material

An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulfuric acid and about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone is effective in removing polymer residue from a substrate, and especially from an integrated circuit chip having aluminum lines thereon.

Etching composition and use thereof

Laser deposition of metal upon transparent materials

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Highland Falls, NY, United States of America

Frank J Schmidt, Jr