Other

Polese Company, Inc.

Oasis Materials Corporation

Tripent Power LLC

Frank J Polese

Vladimir Ocheretyansky

Stuart Weinshanker

Stephen P Nootens

Jonathan H Harris

Glen B Engle

David L Rose

Dana R Graham

Jack A Rubin

Ranganath Saraswati

Terrence V Hermes

William L Bradbury

Walter V Chichra

Steven S Scrantom

Anthony P Grodio

Sorin Dinescu

Walter V Giniel

Michael J Singer

Robert J Tesch

Casey C Clausen

Vlad Ocher

Henry Escalante

William Dixon

A power electronic interposer () for mounting a number of power transistor integrated circuit dice () can be made from a multi-layer ceramic process to provide an aluminum nitride body () having internal tungsten traces (-) to electrically connect die bond pads () to interposer contact pads () allowing connection to circuitry off of the interposer. The traces can include one or more groupings of parallelly spaced apart conductive vias () that are connected in an electrically parallel manner to reduce electrical resistance and inductance in the circuitry. A network of cooling conduits and optional resistance temperature detector traces can be run through other parts of the body to provide controlled active cooling. The interposer can be formed separate ceramic bodies bonded together, to package the dice.

Aluminum nitride multilayer power module interposer and method

A monolithic, substantially hermetic joining or bonding of two or more aluminum nitride ('AlN') ceramic components is made by promoting transient liquid phase sintering near the contact areas between the components. In a first approach, AlN particles are combined with a rare earth oxide sintering additive such as yttrium oxide (YO) in a joining paste can be applied between the joining surfaces of fired ceramic preformed components prior to final firing to weld the components together. In a second approach, the additive is added to green mixture, and the components having different shrinkage aspect ratios are mated and cofired in an atmosphere containing a partial pressure of the additive. The additive encourages wetting and diffusion of the liquid phases present on the surfaces of ceramic interface particles in the contact areas during final firing.

Transient liquid phase, pressureless joining of aluminum nitride components

A heatsink assembly and method of fabrication and use for high power RF LDMOS transistors such as those used in mobile telephone basestation pre-antenna amplifiers wherein die attachment to the heatsink flange occurs prior to leadframe/spacer-to-flange bonding. Various bonding methods are disclosed which do not compromise the die-to-flange attachment bond. A unique leadframe/spacer/flange heatsink package is also disclosed which automatically properly orients attachment of the leadframe/spacer to the flange, and provides for a thickened spacer. A unique leadframe having contact projections also avoids later wire bonding. A unique leadframe/spacer/lid combination is disclosed which allows in one step the bonding of the leadframe to the flange, electrically contacting the die, and encapsulation.

LDMOS transistor heatsink package assembly and manufacturing method

A process for low cost manufacturing light-weight, heat-dissipating structures such as heatsinks, heat spreaders, and covers or lids for microelectronic components such as flip-chip integrated circuits from difficult-to-machine metal matrix composites such as aluminum silicon carbide (generically referred to as &ldquo;Al&mdash;SiC&rdquo; or &ldquo;AlSiC&rdquo;). The process involves selecting a mass produced quantity of Al&mdash;SiC material, forming that material into a thin ribbon, then stamping/coining the ribbon into the structures. The ribbon can be formed by extruding a thin strip from a billet of the Al&mdash;SiC material, then plurally rolling it. In this way, commonly available AlSiC composites manufactured in high volume for use in other applications such as cast automotive parts may be used.

Heat-dissipating aluminum silicon carbide composite manufacturing method

Heat-dissipating microcircuit substrate, having coefficients of thermal expansion adjusted to match the materials of the microcircuit mounted thereupon, are manufactured by powder metallurgy using carbides resulting from the combination of various types of carbons and wetting agents.

Isotropic carbon/copper composites

A homogeneous sintered composite made by press-forming a homogeneous mixture of powders of an agglutinating component, a second component having a melting point higher then the agglutinating component, and an exothermically reactive component to form a compact; heating the compact, then inducing an exothermic reaction of the reactive substance which generates sufficient additional heat to melt the agglutinating component without melting the high melting point component. For electronic microcircuit heat-dissipation applications the agglutinating component is a high thermal conductivity metal, and the high melting point component has a low thermal expansivity, whose proportions are adjusted to match the thermal expansion characteristics of microcircuit material. To reduce porosity, the reacted compact is pressed again while the agglutinating component is still in the liquid phase. For low weight applications the second material has high specific thermal conductivity. For filtration media applications, the reacted compact is allowed to cool with or without pressing, leaving a porous final composite. For corrosion resistant media, the agglutinating component is a low refractory metal, and the second material is a refractory metal oxide, carbide or boride.

Exothermically sintered homogeneous composite and fabrication method

High density heatsinks for microcircuit packages are formed by first mold-pressing a composite powder of free-flowing spray-dried particles of an inexpensive high thermal conductivity material having a high coefficient of thermal expansion (CTE) such as copper and at least one other low CTE material such as tungsten, the proportions of which are adjusted to match the CTE of the microcircuit material. The pressed compacts are sintered in order to achieve an homogeneous distribution of the melting copper throughout the structure. A multilevel embodiment of the heatsink comprises two bonded layers of metals or composites having their coefficients of thermal expansion adjusted to match those of the semiconductor material and of any supporting structures respectively, wherein the second layer in contact with the supporting structure has a high CTE and the other has a lower CTE. Another embodiment provides for bonding a composite heatsink to a high thermal conductivity pedestal which mounts the microcircuit device, using sintering to shrink an aperture engaged by the pedestal.

Heat-dissipating package for microcircuit devices and process for

Heat-dissipating package for microcircuit devices

Heatsinks for microcircuit packages are formed by first mold-pressing a composite powder of free-flowing spray-dried particles of copper and at least one other denser material such as tungsten and/or molybdenum breakably agglutinated in nodules grouping sub-nodules of surface alloyed pairs of particles of each metal, the proportions of which are adjusted to match the thermal expansion characteristics of the microcircuit material. The pressed compacts are then heated in a sintering furnace at 1090.degree. C. to 1150.degree. C. in order to effect an homogeneous distribution of the melting copper throughout the structure. The process results in a readily usable component having good thermal conductivity and matched thermal expansion that requires no further machining.

Heat-dissipating substrate for micro-electronic devices and fabrication

High density heatsinks for microcircuit packages are formed by first mold-pressing a composite powder of free-flowing spray-dried particles of copper and at least one other denser material such as tungsten and/or molybdenum, the proportions of which are adjusted to match the thermal expansion characteristics of the microcircuit material. The pressed compacts are then heated in a sintering furnace at 1,200.degree. C. to 1,350.degree. C. in order to effect an homogeneous distribution of the melting copper throughout the structure. The process results in a readily usable component having good thermal conductivity and matched thermal expansion that requires no further machining.

Method for making heat-dissipating elements for micro-electronic devices

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San Diego, CA, United States of America

Frank J Polese