Asm International N.v.

Asm IP Holding B.v.

Frank Huussen

Theodorus Gerardus Maria Oosterlaken

Ernst Hendrik August Granneman

Theodorus G M Oosterlaken

Albert Hasper

Jack Herman Van Putten

Herbert Terhorst

Adriaan Garssen

Steven R A Van Aerde

Klaas P Boonstra

Chris G M De Ridder

Christianus Gerardus Maria De Ridder

Jan Zinger

Cornelius A Van Der Jeugd

Gert-Jan Snijders

Menso Hendriks

De Chris G M Ridder

Timothy Robert Landsmeer

Gerrit Ten Bolscher

Christianus Gerardus Maria Ridder

Cornelis Marinus Kooijman

Jeroen Jan Stoutjesdijk

Gijs Dingemans

Liu Zhenduo

Remco Van Der Berg

Chris Gm De Ridder

Gerard Berenpas

In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.

Process for forming silicon-filled openings with a reduced occurrence of voids

An exemplary embodiment of the present invention provides a method of depositing of a film on semiconductor wafers. In a first step, a film thickness of 3 um or less is deposited on wafers accommodated in a wafer boat in a vertical furnace at a deposition temperature of the furnace while a deposition gas is flowing. During the first step, the temperature may be held substantially constant. In a second step, a temperature deviation or variation of at least 50&#xb0; C. from the deposition temperature of the first step is applied and the furnace temperature is returned to the deposition temperature of the first step while the flow of the deposition gas is stopped. The first and second steps are repeated until a desired final film thickness is deposited.

Method for depositing films on semiconductor wafers

A method for processing solar cells comprising:

Method for processing solar cell substrates

Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the chamber and exit from the opposite end. Successive gases entering the chamber are selected so that a stable interface with the immediately preceding gas can be maintained. For example, when the gases are fed into the chamber at the chamber's top end and are exhausted at the bottom end, the gases are chosen with successively lower molecular weights. In effect, each gas atmosphere stays on top of and pushes the previous gas atmosphere out of the chamber from the top down. Advantageously, the gases can be more effectively and completely removed from the chamber.

Method and apparatus for processing semiconductor substrates

A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the 'device side' of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.

Method and apparatus for supporting a semiconductor wafer during processing

A semiconductor processing reactor comprises a reaction chamber with a gas exhaust and a mechanical seal at one end of the chamber. The seal seals off the chamber from the ambient environment and is purged with gas to prevent diffusion of ambient gases into the reaction chamber. Because the purge gas can diffuse through the seal into the reaction chamber, the purge gas is chosen based upon the process gas and the location of the seal and exhaust so that the molecular weight of the purge gas causes the purge gas, by the force of gravity or buoyancy, to remain in the portion of the reaction chamber containing the seal and the gas exhaust. Advantageously, keeping the purge gas at the same end of the chamber as the gas exhaust minimizes dilution of the process gas with the purge gas, thereby preventing the purge gas from detrimentally effecting process results.

Method and apparatus for purging seals in a thermal reactor

A hybrid cascade Model-Based Predictive control (MBPC) and conventional control system for thermal processing equipment of semiconductor substrates, and more in particular for vertical thermal reactors is described. In one embodiment, the conventional control system is based on a PID controller. In one embodiment, the MBPC algorithm is based on both multiple linear dynamic mathematical models and non-linear static mathematical models, which are derived from the closed-loop modeling control data by using the closed-loop identification method. In order to achieve effective dynamic linear models, the desired temperature control range is divided into several temperature sub-ranges. For each temperature sub-range, and for each heating zone, a corresponding dynamic model is identified. During temperature ramp up/down, the control system is provided with a fuzzy control logic and inference engine that switches the dynamic models automatically according to the actual temperature. When a thermocouple (TC) temperature measurement is in failure, a software soft sensor based on dynamic model computing is used to replace the real TC sampling in its place as a control system input. Consequently, when a TC failure occurs during a process, the process can be completed without the loss of the semiconductor substrate(s) being processed.

Hybrid cascade model-based predictive control system

A pedestal for use in a high temperature vertical furnace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal, comprising quartz-enveloped insulation material, supports a wafer boat at a boat support level and is provided with an upper section disposed above the boat support level. The upper section comprises enveloped insulating material. The envelope of the upper section is also formed of quartz and the insulating material in the upper section has a lower thermal conductance than the insulating material in a lower quartz enveloped section.

Multilevel pedestal for furnace

A support sleeve for supporting a high temperature process tube comprises one or more circumferential channels, each channel connected to either a feed for gas or a vacuum exhaust. One circumferential channel opens to the top surface of the sleeve, on which the process tube is supported to provide a gas/vacuum seal between the process tube and support sleeve. Another circumferential channel is connected to a gas feed and provided with gas injection holes, evenly distributed along the support sleeve perimeter to provide a cylindrically symmetrical injection of process gas into the process tube. Another circumferential channel is connected to an exhaust for gas and provided with gas exhaust holes, evenly distributed along the circumference of the support sleeve, to provide a cylindrically symmetric exhaust of process gases from the process tube.

Process tube support sleeve with circumferential channels

A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the &ldquo;device side&rdquo; of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.

Method for supporting a semiconductor wafer during processing

Enhanced inserts are formed having a cylindrical grip and a protrusion extending from the grip. An ultra hard material layer is bonded on top of the protrusion. The inserts are mounted on a rock bit and contact the earth formations off center. The ultra hard material layer is thickest at a critical zone which encompasses a major portion of the region of contact between the insert and the earth formation. Transition layers may also be formed between the ultra hard material layer and the protrusion so as to reduce stresses formed on the interface between the ultra hard material and the protrusion.

Method and device for transferring wafers

A method is provided for pre-treating reactor parts, comprising quartz or silicon, in use in chemical vapor deposition reactors. Applying the pre-treatment prior to deposition increases the cumulative deposited film thickness that can be received by the reactor parts before contamination of wafers processed in said reactors exceeds acceptable limits. The pre-treatment comprises nitridation of the surface of the reactor part, such as by heating the reactor part to a temperature of at least 800&deg; C. and exposing the reactor part to a nitrogen-containing gas.

Growing community of inventors

Bilthoven, Netherlands

Frank Huussen