Imec Vzw

Agency for Science, Technology and Research

National University of Singapore

Frank Holsteyns

Eric Beyne

Tim Stakenborg

Karolien Jans

Simon Braun

Quoc Toan Le

Henricus Philipsen

Michel Bosman

Christophe Lorant

Utkur Mirsaidov

Tanmay Ghosh

Zainul Aabdin

Antoine Pacco

The disclosed technology generally relates to storing data, and more particularly relates to a method of storing data in a polymer, where the data comprises a sequence of bits. In one aspect, the method comprises receiving a sequence of bits to be stored and providing a group of different homo-bifunctional monomers. Each homo-bifunctional monomer comprises a core structure having identical functional groups attached at two different positions of the core structure. The group of different homo-bifunctional monomers comprises homo-bifunctional monomers having at least two different core structures. The method further comprises linking the different homo-bifunctional monomers together to form the polymer having a sequence of monomer core structures representing the sequence of bits to be stored. The different homo-bifunctional monomers are linked together using a click chemistry reaction between the functional groups of the different homo-bifunctional monomers. The present disclosure further relates to a synthesis system for performing the method.

Method of storing data in polymer

This document describes a system and method for selectively switching the fast-wet-etching direction of crystalline silicon, c-Si, nanostructures between the () and the () crystallographic planes of c-Si by a simple method of sample agitation. This method effectively allows the invention to achieve anisotropic and isotropic wet-etching of c-Si.

System and method for controlling directionality of fast-wet etching of crystalline silicon, c-Si

A method is provided for dicing a semiconductor substrate into a plurality of dies, the semiconductor substrate having a front side including a plurality of device areas, a back side, and a plurality of through substrate vias. The method includes defining, from the front side, at least one trench to be formed between adjacent device areas, forming the at least one trench, from the front side of the semiconductor substrate, arranging a protective layer on the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate, processing the back side of the semiconductor substrate to form at least one contact, the contact contacting at least one through substrate via, etching through the minor portion of the thickness of the semiconductor substrate underneath the at least one trench, and dicing the semiconductor substrate into the plurality of dies.

Method for dicing a semiconductor substrate into a plurality of dies

A method for etching one or more entities on a semiconductor structure, each entity being made of a material selected from metals and metal nitrides is provided. The method includes the steps of: (a) oxidizing by electrolysis, at a current of at least 0.1 A, a precursor solution comprising chloride anions at a concentration ranging from 0.01 mol/l to 1.0 mol/l, thereby forming an etching solution; (b) providing a semiconductor structure having the one or more entities thereon; and (c) etching at least partially the one or more entities by contacting them with the etching solution.

Etching using an electrolyzed chloride solution

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Leuven, Belgium

Frank Holsteyns