Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Soitec

Université Jean-Monnet

Frank Fournel

Hubert Moriceau

Pierre Montmeat

Christophe Morales

Vincent Larrey

Marc Zussy

Laurent Bally

Loic Sanchez

Sylvain Maitrejean

Maxime Argoud

Bernard Aspar

Oleg Kononchuk

Shay Reboh

Julie Widiez

Frederic Mazen

Francois Rieutord

Sébastien Becker

Didier Landru

Jean Dijon

Xavier Baillin

Claire Fenouillet-Beranger

Emmanuel Augendre

Sylvie Menezo

Perrine Batude

Yannick Le Tiec

Ludovic Ecarnot

Chrystel Deguet

François Templier

Jean-Michel Hartmann

Brigitte Montmayeul

Frédéric Mazen

Séverine Cheramy

Emilie Bourjot

Thierry Enot

Christophe Dubarry

Patrick Leduc

Pierre Mur

Christophe Constancias

Laurent Brunet

François Rieutord

Pierre Perreau

Florent Pigeon

Damien Radisson

Alexis Bavard

Jean-François Damlencourt

Laurent Michaud

Elodie Beche

Michel Pellat

Loïc Sanchez

Dominique Jourde

Amandine Jouve

Gilles Despaux

Paul Stewart

Emilie Deloffre

Karine Abadie

Quentin Lomonaco

Ali Dekious

Chloé Martin-Cocher

Emmanuel Le Clezio

Marwan Tedjini

Jeremy Da Fonseca

Clement Castan

Oleg Kononchuck

Remi Beneyton

Bernard Dalzotto

Philippe Michallon

Valerie Pouteau

Jérôme Meziere

Florence Garrelie

Aziliz Calvez

Jérémy Da Fonseca

A process for bonding chips to a substrate by direct bonding includes providing a support with which the chips are in contact, the chips in contact with the support being separate from one another. This bonding process also includes forming a liquid film on one face of the substrate, bringing the chips into contact with the liquid film, where the action of bringing the chips into contact with the liquid film causes attraction of the chips toward the substrate, and evaporating the liquid film in order to bond the chips to the substrate by direct bonding.

Method for bonding chips to a substrate by direct bonding

A method of transferring a layer from a source substrate to a destination substrate, including the following steps: a) arranging a masking disk on a central portion of a bonding surface of said layer and/or of the destination substrate b) implementing an ion etching to form a step in front of a peripheral portion, not covered with the masking disk, of the bonding surface of said layer and/or of the destination substrate c) removing the masking disk; d) activating the bonding surface of said layer and the bonding surface of the destination substrate; and e) placing into contact the bonding surface of said layer with the bonding surface of the destination substrate.

Method for transferring a layer from a source substrate to a destination substrate

A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and—applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

Process for hydrophilically bonding substrates

A method of transferring a layer from a source substrate to a destination substrate, comprising the following steps: a) activating a bonding surface of said layer and a bonding surface of the destination substrate, by ion etching of said surfaces, or by sputtering of a bonding material onto said surfaces; and b) after step a), placing into contact the bonding surface of said layer with the bonding surface of the destination substrate, wherein, during step a), a masking ring covers a peripheral portion of the bonding surface of said layer, and/or a masking ring covers a peripheral portion of the bonding surface of the destination substrate; and wherein steps a) and b) are carried out under vacuum and with no rupture of vacuum between the two steps.

A surface activated bonding method by ion or atom bombardment of a first surface of a first substrate to a second surface of a second substrate, the material of the first substrate at the first surface including at least two chemical species, one of which, called the species of interest, becomes depleted upon activation by ion or atom bombardment, the method including depositing a layer of the species of interest onto the first surface of the first substrate; activating the first surface by bombarding the first surface with an ion or atom beam so as to consume the entire previously deposited layer of species; and activating the second surface by bombarding the second surface with an ion or atom beam; and contacting the first surface of the first substrate with the second surface of the second substrate.

Surface activated bonding method by ion or atom bombardment of a first surface of a first substrate to a second surface of a second substrate

A method of treatment of an electronic circuit including at a location at least one electrically-conductive test pad having a first exposed surface. The method includes the at least partial etching of the test pad from the first surface, and the forming on the electronic circuit of an interconnection level covering said location and including, on the side opposite to said location, a second planar surface adapted for the performing of a hybrid molecular bonding.

Method of treatment of an electronic circuit for a hybrid molecular bonding

Manufacturing a handle substrate includes: providing a support substrate having a receiving face; depositing an anti-adherent formulation including a first solvent over the receiving face of the support substrate so as to form a film; depositing a liquid formulation over a face of the film, before the complete evaporation of the first solvent, the liquid formulation being intended to form an adhesive layer; and evaporating the first solvent so as to obtain an anti-adherent film from the film in order to obtain the handle substrate and to obtain a bonding energy between the anti-adherent film and the adhesive layer lower than about 1.2 J/m. The step of depositing of a liquid formulation is carried out when the face of the film has a water drop angle smaller than 65 degrees, so as to avoid any risk of dewetting of the liquid formulation.

Method for manufacturing a handle substrate intended for temporary bonding of a substrate

A method for transferring at least one chip, from a first support to a second support, includes forming, while the chip is assembled to the first support, an interlayer in the liquid state between, and in contact with, a front face of the chip and an assembly surface of a face of the second support and a solidification of the interlayer. Then, the chip is detached from the first support while maintaining the interlayer in the solid state.

Method for transferring chips

The invention relates to a method for fabricating a thermal detector (), comprising the following steps:

Method for fabricating a detection device comprising a step of direct bonding of a thin sealing layer provided with a getter material

A method of temporary bonding of an object having first and second opposite surfaces successively including bonding the object to a handle on the side of the first surface, bonding the object to a first adhesive film on the side of the second surface, bonding the first adhesive film to a second adhesive film on the side opposite to the object, and removing the handle from the object.

Temporary bonding method

A method for transferring a thin layer onto a destination substrate having a face with an adhesive layer includes formation of a polymer material interface layer on a second face of a thin layer, opposite a first face on which an adhesive is present. The method also includes assembly by gluing the interface layer and the adhesive layer and separation of the thin layer relative to a temporary support.

Method for transferring thin layers

A method includes transferring a layer onto a flexible substrate, the layer being located in a stack on the front face of the substrate. The substrate includes at least one supplementary stack interposed between the stack and the bulk layer of the substrate. This supplementary stack includes at least two layers with thicknesses decreasing in the direction of the front face. The method makes provision, after bonding the flexible substrate on the front face, for successively and gradually removing the various layers of the substrate. Such gradualness makes it possible to transfer a thin layer of silicon, with a thickness of less than 50 nm, onto a flexible substrate.

Thin-film transfer method

A display device including a first integrated circuit including: an assembly of light-emitting diodes, each diode including a vertical stack of a first semiconductor layer of a first conductivity type and of a second semiconductor layer of a second conductivity type; and on the side of a surface of the first circuit opposite to the first semiconductor layer, a connection structure including a dielectric layer having a plurality of identical or similar connection pads, regularly distributed across the entire surface of the first circuit, arranged therein, each diode having a first electrode in contact with at least one pad of the connection structure, and a second electrode in contact with a plurality of pads of the connection structure at the periphery of the plurality of diodes.

LED emissive display device and method for producing such a device

The invention relates to a method for fabricating a detection device, comprising the following steps:

Method for fabricating a detection device comprising a step of transferring and direct bonding of a thin layer provided with a getter material

A method for disassembling a stack of at least three substrates. The invention relates to the techniques for transferring thin films in the microelectronics field. It proposes a method for disassembling a stack of at least three substrates having between them two interfaces, one interface of which has an adhesion energy and an interface of which has an adhesion energy, with less than, the method comprising: 1) implementing a removal of material on the first substrate, in order to expose a surface of the second substrate, 2) transferring the stack onto a flexible adhesive film so that the surface has, with an adhesive layer of the film, an adhesion energy greater than, and 3) disassembling the third substrate at the interface between the second substrate and the third substrate. The method makes it possible to open the stack via the interface thereof with the highest adhesion energy.

Method of dismantling a stack of at least three substrates

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Villard-Bonnot, France

Frank Fournel