Siltronic Ag

Frank Faller

Timo Mueller

Michael Gehmlich

Timo Müller

Dirk Waehlisch

Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer

Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 &#x3bc;m and not more than 18 &#x3bc;m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 &#x3bc;m from the front side is not less than 2&#xd7;10cm. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.

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Neuoetting, Germany

Frank Faller