Azur Space Solar Power Gmbh

Soitec

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Soitec Solar Gmbh

Frank Dimroth

Bruno Ghyselen

Chantal Arena

Andreas Bett

Matthias Meusel

Gerhard Strobl

Rainer Klaus Krause

Cécile Aulnette

Wolfgang Guter

Eric Guiot

Eric Mazaleyrat

Christoph Schmidt

Joachim Jaus

Cecile Aulnette

Charlotte Drazek

Lars Ebel

Hansjoerg Lerchenmueller

Armin Bösch

Alexandre William Walker

Hansjörg Lerchen-Müller

Stefan Janz

Armin Boesch

Rene Kellenbenz

Eduard Oliva

Andreas W Bett

Jan Schöne

René Kellenbenz

Jara Fernandez

Hansjörg LERCHENMÜLLER

Jan Dipl-Ing Schöne

An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm&#xb7;cm, preferably below 1 mOhm&#xb7;cm; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm&#xb7;cm, preferably less than 1 mOhm&#xb7;cm.

Engineered substrate

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Monolithic multiple solar cells

A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 &#x212b; greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.

Multi solar cell

A stacked integrated multi-junction solar cell, having a first subcell, whereby the first subcell has a layer of an InGaP compound with a first lattice constant and a first band gap energy, and the thickness of the layer is greater than 100 nm and the layer is formed as part of an emitter and/or as part of the base and/or as part of the space charge region lying between the emitter and base, and a second subcell with a second lattice constant and a second band gap energy, and a third subcell with a third lattice constant and a third band gap energy, and a fourth subcell with a fourth lattice constant and a fourth band gap energy, and a region with a wafer bond is formed between two subcells.

Stacked integrated multi-junction solar cell

This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

Advanced CPV solar cell assembly process

This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

Multiple transfer assembly process

The invention relates to a photovoltaic concentrator module with multifunction frame and also to a method for production thereof. The concentrator module has a lens- and a base plate, between which a frame extends. Between the lens plate and the frame and/or the base plate and the frame, two sealing compounds and/or adhesive compounds extend, which compounds differ with respect to their hardening time and/or gas permeability.

Photovoltaic concentrator module with multifunction frame

Growing community of inventors

Freiburg, Germany

Frank Dimroth