Infineon Technologies Ag

Infineon Technologies Austria Ag

Siemens Aktiengesellschaft

Other

Infineon Technologies Dresden Gmbh & Co. Kg

Infineon Technologies LLC

Frank Dieter Pfirsch

Hans-Joachim Schulze

Anton Mauder

Franz Hirler

Franz-Josef Niedernostheide

Armin Willmeroth

Johannes Georg Laven

Dorothea Werber

Christian Philipp Sandow

Alexander Philippou

Stefan Sedlmaier

Stephan Voss

Carsten Schaeffer

Christian Jaeger

Frank Hille

Holger Huesken

Walter Rieger

Holger Ruething

Thorsten Meyer

Markus Zundel

Wolfgang Werner

Roman Baburske

Wolfgang Klein

Roland Rupp

Erich Griebl

Manfred Pfaffenlehner

Philip Christoph Brandt

Francisco Javier Santos Rodriguez

Helmut Strack

Matteo Dainese

Caspar Leendertz

Franz Josef Niedernostheide

Elmar Falck

Maria Cotorogea

Hans Peter Felsl

Thomas Raker

Ingo Dirnstorfer

Jens Peter Konrath

Hans-Joerg Timme

Heinz Mitlehner

Holger Schulze

Antonio Vellei

Markus Bina

Josef Lutz

Hans-Peter Felsl

Vera Van Treek

Volodymyr Komarnitskyy

Viktoryia Lapidus

Arunjai Mittal

Carsten Sch&auml;ffer

Gerald Deboy

Jenoe Tihanyi

Hans Weber

Thomas Basler

Joachim Weyers

Uwe Wahl

Johannes Baumgartl

Wolfgang Lehnert

Ingo Muri

Dirk Ahlers

Reiner Barthelmess

Rudolf Berger

Moriz Jelinek

Iris Moder

Frank Wolter

Andre Rainer Stegner

Markus Beninger-Bina

Thomas Gutt

Carolin Tolksdorf

Herbert Schäfer

Raimund Foerg

Reinhold Kuhnert

Uwe Kellner-Werdehausen

Manfred Kotek

Holger Kapels

Roman Roth

Ralf Henninger

Frank Umbach

Christian Robert Mueller

Gerhard Miller

Mathias Plappert

Philipp Seng

Manfred Pippan

Christoph Weiss

Oliver Schilling

Joost Larik

Wolfgang Wagner

Michael Rüb

Martin Ruff

Thomas Auer

Alice Pei-Shan Hsieh

Alexandra Ludsteck-Pechloff

Steffen Schmidt

Gerhard Schmidt

Herbert Pairitsch

Viktoryia Uhnevionak

Judith Specht

Jana Hänsel

Katja Waschneck

An RC IGBT includes an IGBT section and a diode section. At least some of a plurality of diode mesas in the diode section are coupled to the drift region via a second anode region electrically connected to the emitter terminal of the RC IGBT. The second anode region extends deeper along the vertical direction as compared to trenches in the diode section.

RC IGBT and method of producing an RC IGBT

A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first source and wherein the supplemental cell includes a second gate and a supplemental electrode. The unipolar switching device is based on a wide bandgap material and includes a third gate and a third source. The third gate and the second gate are electrically connected with each other and are disconnected from the first gate. The first source, the supplemental cell and the third source are electrically connected with each other.

Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device

A power semiconductor device includes a semiconductor substrate and a plurality of transistor cells formed in the semiconductor substrate and electrically connected in parallel to form a power transistor. Each transistor cell includes a gate structure including a gate electrode and a gate dielectric stack separating the gate electrode from the semiconductor substrate. The gate dielectric stack includes a ferroelectric insulator and a first dielectric insulator. The first dielectric insulator has a relative permittivity greater than that of silicon dioxide. A driver device for switching the power transistor and a corresponding method of operating the power transistor are also described.

Power semiconductor device having a gate dielectric stack that includes a ferroelectric insulator

A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.

Power semiconductor switch having a cross-trench structure

A vertical power semiconductor device includes a semiconductor body having opposing first and second main surfaces. At least part of a gate trench structure formed at the first main surface extends along a first lateral direction. Body and source regions directly adjoin the gate trench structure. A drift region is arranged between the body region and second main surface. A body contact structure includes first and second body contact sub-regions spaced at a first lateral distance along the first lateral direction. Each body contact sub-region directly adjoins the gate trench structure and has a larger doping concentration than the body region. In a channel region between the body contact sub-regions, the body contact structure has a second lateral distance to the gate trench structure along a second lateral direction perpendicular to the first lateral direction. The first lateral distance is equal to or less than twice the second lateral distance.

Vertical power semiconductor device and manufacturing method

An embodiment relates to a method for manufacturing a semiconductor device. The method includes providing a semiconductor body including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type interposed between the first semiconductor region and a first surface of the semiconductor body. The method further includes forming a first contact layer over the first surface of the semiconductor body. The first contact layer forms a direct electrical contact to the second semiconductor region. The method further includes forming a contact trench extending into the semiconductor body by removing at least a portion of the second semiconductor region. The method further includes forming a second contact layer in the contact trench. The second contact layer is directly electrically connected to the semiconductor body at a bottom side of the contact trench.

Semiconductor device having contact layers and manufacturing method

An RC IGBT includes, in an active region, an IGBT section and at least three diode sections. The arrangement of the diode sections obeys a design rule.

RC IGBT

An RC IGBT with an n-barrier region in a transition section between a diode section and an IGBT section is presented.

RC IGBT with an IGBT section and a diode section

A power semiconductor device includes: a semiconductor body having a front side surface and a drift region having first conductivity type dopants; and an edge termination region that includes a part of the drift region and a first semiconductor region extending along the front side surface. The first semiconductor region includes dopants of both conductivity types and forms a continuous pn-junction with the drift region. An integrated vertical dopant concentration of the second conductivity type dopants is higher than an integrated vertical dopant concentration of the first conductivity type dopants within the first semiconductor region. A first dose profile representing a vertically integrated net dopant concentration of the both conductivity type dopants in the first doped semiconductor region has a smaller degree of waviness along a horizontal direction than a second dose profile representing a vertically integrated dopant concentration of the second conductivity type dopants in the same semiconductor region.

Power semiconductor device and method

A power semiconductor device includes a semiconductor body having front and back sides. The semiconductor body includes drift, field stop and emitter adjustment regions each of a first conductivity type. The field stop region is arranged between the drift region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the drift region. The emitter adjustment region is arranged between the field stop region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the field stop region. The semiconductor body has a concentration of interstitial oxygen of at least 1E17 cm. The field stop region includes a region where the dopant concentration is higher than that in the drift region at least by a factor of three. At least 20% of the dopants of the first conductivity type in the region are oxygen-induced thermal donors.

Power semiconductor device

A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.

Semiconductor die, semiconductor device and IGBT module

A power semiconductor device includes a semiconductor body having a drift region of a first conductivity type inside an active region. An edge termination region includes: a guard region of a second conductivity type at a front side of the semiconductor body and surrounding the active region; and a field plate trench structure extending vertically into the body from the front side and at least partially filled with a conductive material that is electrically connected with the guard region and insulated from the body external of the guard region. A first portion of the field plate trench structure at least partially extends into the guard region and is at least partially arranged below a metal layer arranged at the front side. A second portion of the field plate trench structure extends outside of the guard region and surrounds the active area, the metal layer not extending above the second portion.

Power semiconductor device and method of processing a power semiconductor device

An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.

Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type

A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active region conducts load current between first and second load terminals. At least one power cell has trenches extending into the semiconductor body adjacent to each other along a first lateral direction and having a stripe configuration that extends along a second lateral direction into the active region. The trenches spatially confine a plurality of mesas each having at least one first type mesa electrically connected to the first load terminal and configured to conduct at least a part of the load current, and at least one second type mesa configured to not conduct the load current. A decoupling structure separates at least one of the second type mesas into a first section in the active region and a second section in the termination region.

Power semiconductor device having a cross-trench arrangement

A power semiconductor device includes a semiconductor substrate with an edge termination region between an active region and a lateral rim. Non-metallic electrodes extend in the edge termination region on a front side of the substrate, and include at least three spaced apart non-metallic electrodes. One non-metallic electrode is an inner non-metallic electrode having an inner edge. Another non-metallic electrode is an outer non-metallic electrode having an outer edge. The shortest distance between the inner edge of the inner non-metallic electrode and the outer edge of the most non-metallic electrode is defined as distance p. Each non-metallic electrode is electrically connected to a respective doping region of the substrate by at least two respective metallic plugs each extending through a respective first opening formed in an electrically insulating bottom layer. The shortest distance d between any two metallic plugs of different non-metallic electrodes is larger than the distance p.

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Munich, Germany

Frank Dieter Pfirsch