Texas Instruments Corporation

Other

Frank D Poag

Richard L Guldi

Douglas E Paradis

William D Light

Hilario T Trevino

Virgil Q Turner

Deepak Arabagatte Ramappa

Asad Mahmood Haider

Roni K Doak

William Pressnall

Paul C Hashim

The invention provides a method of fabricating a semiconductive device []. In this embodiment, the method comprises depositing a hydrocarbon layer [] over a semiconductive substrate, forming an interconnect structure [] within the hydrocarbon layer [], and removing the hydrocarbon layer [] by sublimation.

Semiconductive device fabricated using subliming materials to form interlevel dielectrics

A system ( ) is disclosed for cleaning a vertical furnace ( ) pedestal ( ) and cap ( ) including at least one inlet conduit ( ) in fluid communication with a pressurized cleaning medium source ( ). The system also includes at least one exhaust conduit ( ) in fluid communication with a negative pressure source ( ). A boat assembly ( ) may be positioned such that the at least one conduit ( ) is operable to direct cleaning medium at the boat assembly ( ) to dislodge contaminate particles associated with the boat assembly. The exhaust outlet ( ) then evacuates the cleaning medium and any dislodged contaminate particles. The system may operate automatically within a closed processing environment and after each process cycle.

Apparatus and method for cleaning a vertical furnace pedestal and cap

A method for processing substrates such as semiconductor wafers (,) includes providing a chamber (,) having a production nozzle (,) and two cleaning nozzles (,). During production intervals, a level of particles carried by gases exiting the chamber are measured by an in-situ particle monitor (,). If an abnormally high particle level is detected, a cleaning procedure is carried out during a nonproduction interval which exists between production intervals in a production mode. During this cleaning, the chamber is maintained at a low pressure by a vacuum pump (,), and a cleaning gas (GAS,) is supplied through valves (,) and mass flow controllers (,) to respective nozzles. The valves are controlled so as to pulse or modulate the flow of the cleaning gas to the nozzles.

Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals

A system (12) for delivering spin-on-glass (SOG) to a substrate (14) has a spin chuck (16) for spinning a substrate (14), a delivery nozzle (18, 118, 218, 318, 418) having an interior conduit (419), a delivery nozzle-positioning subsystem (62) coupled to the delivery nozzle (18, 118, 218, 318, 418) for selectively positioning the delivery nozzle (18, 118, 218, 318, 418) over the spin chuck (16) for delivery of SOG, a SOG supply line (60, 160, 360) for supplying SOG, a cleaning fluid supply line (22, 122, 322) for supplying a cleaning fluid used to remove dried SOG, and a valve subsystem (20, 120, 320) fluidly coupled to the SOG supply line (60, 160, 360), cleaning-fluid supply line (22, 122, 322), and delivery nozzle (18, 118, 218, 318, 418) for selectively delivering SOG or a cleaning fluid through the interior conduit (419) of the delivery nozzle (18, 118, 218, 318, 418). A cleaning station 466 may be used to clean an exterior (421) of the nozzle (18, 118 218, 318, 418). A method for applying SOG to a substrate (14) through a delivery nozzle (18, 118,218,318,418) and for cleaning the delivery nozzle (18, 118, 218, 318, 418) includes the steps of delivering SOG to the substrate (14) and cleaning the nozzle (18, 118, 218, 318, 418) when cleaning is desirable by among other things delivering a cleaning fluid from a cleaning fluid supply line (22, 122, 322) through the valve subsystem (20, 120, 320) to the interior conduit (419) of the delivery nozzle (18, 118, 218, 318, 418) to remove any SOG from the interior conduit (419).

System and method for cleaning nozzle delivering spin-on-glass to

Methods and apparatus are providing for cleansing contaminants from substrates, such as semiconductor wafer handling implements, and thereby reduce the incidence of contamination of semiconductor devices being assembled upon the semiconductor wafers. In one aspect of the invention, a substrate such as a semiconductor cassette or other semiconductor wafer handling implement, is inserted into a chamber that is substantially isolated from a surrounding environment. A pressurized, and optionally purified, cleansing medium is directed against at least one surface of the substrate to dislodge contaminants from the substrate surface. Dislodged contaminants are evacuated with negative pressure from the chamber. In a preferred aspect of the invention, the cleansing medium is an inert gas, such as nitrogen, and is applied to the substrate at a pressure from about 10 p.s.i. to about 100 or more p.s.i. The chamber can be provided with sidewalls define a convergent evacuation path that is in fluid communication with an exhaust stream, such as the exhaust stack of the manufacturing facility.

Enhanced high pressure cleansing system for wafer handling implements

Methods are providing for cleansing contaminants from substrates, such as semiconductor wafer handling implements, and thereby reduce the incidence of contamination of semiconductor devices being assembled upon the semiconductor wafers. In one aspect of the invention, a substrate such as a semiconductor cassette or other semiconductor wafer handling implement, is inserted into a chamber that is substantially isolated from a surrounding environment. A pressurized, and optionally purified, cleansing medium is directed against at least one surface of the substrate to dislodge contaminants from the substrate surface. Dislodged contaminants are evacuated with negative pressure from the chamber. In a preferred aspect of the invention, the cleansing medium is an inert gas, such as nitrogen, and is applied to the substrate at a pressure from about 10 p.s.i. to about 100 or more p.s.i. The chamber can be provided with sidewalls define a convergent evacuation path that is in fluid communication with an exhaust stream, such as the exhaust stack of the manufacturing facility. A method of monitoring contaminant particle count and contaminant concentration which can be used to control the pressurized cleansing medium.

Enhanced cleansing process for wafer handling implements

The electronic monitor includes a level-sensing circuit, a reference circuit, a comparator circuit, and a logic circuit. The level sensing-circuit includes at least one level sensor positioned within the reservoir adjacent to and below a predetermined level. The reference circuit includes a reference sensor positioned in the air adjacent to the maximum allowed level for the material. A current source applies current to all the sensors. The comparator circuit compares the voltage across the reference sensor and the voltage across the level sensor and provides a difference voltage to a logic circuit that activates selective signaling devices depended upon the level of the monitored material. The sensors are preferably negative-coefficient thermistors.

Growing community of inventors

Plano, TX, United States of America

Frank D Poag