Freiberger Compound Materials Gmbh

Frank Börner

Stefan Eichler

Berndt Weinert

Thomas Bünger

Manfred Jurisch

Ulrich Kretzer

Frieder Kropfgans

A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced without any distance or with a distance of maximally about 2 mm to the wafer surface. A process for heat treating III-V semiconductor wafers having diameters larger than 100 mm and a dislocation density below 1&#xd7;10cmis carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.

Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer

A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5&#xd7;10cmin the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.

Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient

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Dresden, Germany

Frank Börner