Nexperia B.v.

Frank Burmeister

Hans-Martin Ritter

Wolfgang Schnitt

Rolf Brenner

Jochen Wynants

Hans-Juergen Funke

Godfried Henricus Josephus Notermans

Tobias Sprogies

Joachim Utzig

Rainer Mintzlaff

Rüdiger Weber

A semiconductor device structure and method of manufacturing a semiconductor device is provided. The method includes providing a first semiconductor substrate having a first major surface and an opposing second major surface, the first major surface having a first metal layer formed thereon; providing a second semiconductor substrate having a first major surface and an opposing second major surface, with the second semiconductor substrate including a plurality of active device regions formed therein and a second metal layer formed on the first major surface connecting each of the plurality of active device regions; bonding the first metal layer of the first semiconductor substrate to the second metal layer of the second semiconductor substrate; and forming device contacts on the second major surface of the second semiconductor substrate for electrical connection to each of the plurality of active device regions.

Semiconductor device

A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.

Semiconductor substrate with electrically isolating dielectric partition

A method of making a plurality of semiconductor devices comprising a chip scale packages. The method includes providing a semiconductor wafer having a major surface and a backside. The method also includes forming a plurality of contacts on the major surface. The method further includes forming a plurality of trenches in the major surface of the substrate. The method also includes forming a plurality of openings in the wafer between the backside and the trenches in the major surface. The method further includes depositing an encapsulant on the backside of the wafer. At least some of the encapsulant passes through the openings in the wafer to at least partially fill the trenches in the major surface. The method also includes singulating the wafer to produce a plurality of chip scale packages having a major surface including one or more contacts and side walls at least partially covered with said encapsulant.

Method of making a plurality of semiconductor devices

A method of protecting sidewalls a plurality of semiconductor devices is disclosed. The method includes fabricating the plurality of semiconductor devices on a semiconductor wafer, etching to form a trench grid network on the backside of the semiconductor wafer. The trench grid network demarcate physical boundaries of each of the plurality of semiconductor devices. The method also includes depositing a protective layer on the backside and etching to remove the protective layer from horizontal surfaces and to singulate each of the plurality of semiconductor devices from the semiconductor wafer.

Semiconductor device with protected sidewalls and methods of manufacturing thereof

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Hamburg, Germany

Frank Burmeister