Avago Technologies General IP (singapore) Pte. Ltd.

Frank Bi

Martha K Small

Richard C Ruby

Suresh Sridaran

Qiang Zou

Donald Lee

Tina L Lamers

Steven M Ortiz

An microelectronic device includes a substrate, a piezoelectric component formed over the substrate, at least one trench formed in the substrate. The piezoelectric component has a corresponding resonance frequency. The at least one trench is configured to reduce mechanical stress on the piezoelectric component, in response to force applied to the substrate, for stabilizing the resonance frequency.

Acoustic resonator device including trench for providing stress relief

An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Film bulk acoustic wave resonator (FBAR) having stress-relief

An acoustic resonator comprises: an acoustic resonator device comprises: a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a first interlayer disposed on the first electrical conductive layer; a buried temperature compensation layer disposed over the first interlayer; a second interlayer disposed over the temperature compensation layer; a second electrically conductive layer disposed over the second interlayer, a piezoelectric layer disposed over the composite first electrode; and a second electrode disposed over the piezoelectric layer.

Temperature compensated acoustic resonator device having an interlayer

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Frank Bi