International Business Machines Corporation

Cabot Corporation

Rensselaer Polytechnic Institute

Cabot Microelectronics Corporation

Frank Benjamin Kaufman

Edward M Engler

Evan G Colgan

James L Speidell

William L Guthrie

Robert Lee Melcher

Bruce A Scott

Margaret Paggi Manny

Kenneth Parker Rodbell

Clifford L Spiro

James McKell Edwin Harper

James A Moore

Roland K Sevilla

Sriram P Anjur

George Steuer

Andrew N Dasheff

Steven R Kramer

Daniel C Edelstein

Naftali Eliahu Lustig

James M Harper

Lawrence D David

Vlasta A Brusic

Mark A Jaso

Robert William Pasco

Burn J Lin

Arnold Reisman

Paul M Feeney

Anton Nenadic

Melvin Berkenblit

William J Patrick

Ming-Fea Chow

Jeffrey William Carr

Peter D Roper

Dennis C Green

Vivian W Chao

David B Thompson

The invention is directed to a method for polishing a surface comprising tungsten carbide, comprising contacting a surface comprising tungsten carbide with an oxidizing agent, a polishing component, and a liquid carrier, and abrading at least a portion of the surface to polish the surface. The invention further provides a method for reconditioning a workpiece comprising tungsten carbide. The invention also provides a cutting tool insert having a highly polished surface.

Method of polishing a tungsten carbide surface

A reflective spatial light modulator array is described incorporating liquid crystal devices, mirrors, a semiconductor substrate, electrical circuits, and a light blocking layer. The light blocking layer can be a reflector/absorber layer containing titanium. The light blocking layer can be a layer resulting in attenuation of incident light below a certain level at the semiconductor substrate. The invention overcomes the problem of shielding light from semiconductor devices, high optical throughput and contrast, pixel storage capacitance to hold the voltage across the liquid crystal device and precise control of the liquid crystal device thickness without spacers obscuring the mirrors.

Reflective spatial light modulator array including a light blocking layer

The invention is directed to a method for polishing a cutting edge on a cutting instrument, comprising contacting a cutting edge of a cutting instrument with a polishing pad and a chemical-mechanical polishing composition comprising particles of an abrasive, and a liquid carrier, wherein the abrasive is suspended in the liquid carrier, and abrading at least a portion of the cutting edge to polish the cutting edge. The invention further provides a cutting instrument having a highly uniform edge.

Method of sharpening cutting edges

Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.

Chemical-mechanical planarization of metallurgy

Reflective spatial light modulator array is described incorporating liquid crystal devices, mirrors, a semiconductor substrate, electrical circuits, and a reflector/absorber layer for blocking light. The invention overcomes the problem of shielding light from semiconductor devices, high optical throughput and contrast, pixel storage capacitance to hold the voltage across the liquid crystal device and precise control of the liquid crystal device thickness without spacers obscuring the mirrors.

Reflective spatial light modulator array

A polishing pad for polishing a semiconductor wafer which includes an open-celled, porous substrate having sintered particles of synthetic resin. The porous substrate is a uniform, continuous and tortuous interconnected network of capillary passage. The pores of the porous substrate have an average pore diameter of from about 5 to about 100 microns which enhances pad polishing performance.

Polishing pads for a semiconductor substrate

A polishing pad for polishing a semiconductor wafer which includes an open-celled, porous substrate having sintered particles of synthetic resin. The porous substrate is a uniform, continuous and tortuous interconnected network of capillary passage.

Polishing pad for a semiconductor substrate

A reflective spatial light modulator array is described incorporating liquid crystal devices, mirrors, a semiconductor substrate, electrical circuits, and a reflector/absorber layer for blocking light. The invention overcomes the problem of shielding light from semiconductor devices, high optical throughput and contrast, pixel storage capacitance to hold the voltage across the liquid crystal device and precise control of the liquid crystal device thickness without spacers obscuring the mirrors.

Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps;

Method of chemical-mechanical polishing an electronic component

An insoluble electron beam positive polyimide having the formula ##STR1## can be exposed by an electron beam to render the exposed areas soluble. The exposed areas can then be dissolved using a solvent to leave the pattern which can be used directly as an insulator layer in a semiconductor device.

Electron-beam positive polyimide

An insoluble photosensitive polyimide having the formula ##STR1## can be exposed by a pattern of light to render the exposed areas soluble. The exposed areas can then be dissolved using a solvent to leave the pattern which can be used directly as an insulator layer in a semiconductor device. A process for preparing the photosensitive soluble polyimide utilizes maleic anhydride which is irradiated by ultraviolet light to form a cyclobutane unit which is reacted with oxydianiline to form polymic acid. The polymic acid is cured using heat into the photosensitive soluble polyimide.

Positive-working photosensitive polyimide operated by photo induced

The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric material, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric material becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.

Method of forming fine conductive lines, patterns and connectors

A method is provided for providing a polystyrene-tetrathiafulvalene (PSTTF)/deep-ultraviolet hydrid system which combines the advantages of E-beam or X-ray lithography systems with those of deep-UV conformable printing to produce low bias, high aspect ratio resist images over the topography of microelectronic devices.

Polystyrene-tetrathiafulvalene polymers as deep-ultraviolet mask material

The invention relates to high resolution video storage disks comprising a substrate having disposed thereon a film of a monofunctionalized substituted tetraheterofulvalene compound and a halocarbon. The tetraheterofulvalene compound can have the molecular formula ##STR1## where X can be S and/or Se R can be an alkyl group having from about 1 to about 8 carbon atoms or a benzyl group wherein said benzyl group can be a part of a polymer chain;

High resolution video storage disk

A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed.

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Geneva, IL, United States of America

Frank Benjamin Kaufman